求三篇关于镓铟氧化物薄膜的文献

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1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
9 L) l) h9 L6 K（1996）.
2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
2 p+ |1 t- u# R1 j# r: a4 {0 G（1996）.
期刊：Journal of Vacuum Science & Technology A
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3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
期刊 Journal of materials reasearch
  l9 s' B* ~9 MVol 17   P3155-3162
E-MAIL:liujianjun505@126.com

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给你一篇相关的
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6 h2 c# j8 i7 X7 PBuffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
chemical vapor deposition and their implementation as buffers
8 I0 T0 @+ ]. P! Y2 f0 ZAnchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
0 ?4 l+ T# J0 s2 MRobert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
a Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
0 Z2 a, V" z* BIL 60208, USA
, I0 ]7 v0 x2 r9 ab Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
' Y0 _3 b+ R7 v9 Z: D# F$ f, M) ]" lNorthwestern UniÍersity, EÍanston, IL 60208, USA
c Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
/ M. B( ~. X7 qNorthwestern UniÍersity, EÍanston, IL 60208, USA
Received 12 March 1999; accepted 10 June 1999

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Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering
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. ]0 d) k) A! ZT. Minami ), T. Kakumu, Y. Takeda, S. Takata
Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Abstract
Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
and In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
, Q5 X6 D! ?) |8 r% r7 ^$ jZn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
. u5 q8 S, c$ P3 Z, iq1998 Elsevier Science S.A.
Keywords: Magnetron sputtering; Etching; Fil

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Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering

T. Minami*, T. Kakumu, Y. Takeda and S. Takata

Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
0 T% W9 h# R, U3 N/ CAvailable online 26 February 1999.
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1 q( H% J' u  M# r! z* H# sAbstract
; e. u3 @6 U$ T/ V/ BHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (Zn:(In+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the Zn:(In+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

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