求三篇关于镓铟氧化物薄膜的文献

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1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
9 S) N0 C; c6 u" c3 l（1996）.
  l4 b$ u5 q" v! G: |" v: k2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
3 j. V6 w# w; y8 R4 P（1996）.
期刊：Journal of Vacuum Science & Technology A

3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
, B- y7 K$ O3 x2 H- r作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
期刊 Journal of materials reasearch
Vol 17   P3155-3162
  I/ R* f2 D  |5 DE-MAIL:liujianjun505@126.com

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给你一篇相关的



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Buffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
chemical vapor deposition and their implementation as buffers
Anchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
1 V% z- A7 e  p0 c6 J7 J2 R2 tRobert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
: P5 f/ G6 F" @3 Ea Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
IL 60208, USA
0 J1 D7 P/ i3 t$ [1 F% |  Mb Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
c Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
4 H6 w4 I4 U1 `  k! x/ o7 X: ZReceived 12 March 1999; accepted 10 June 1999

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Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering

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, C! H+ X: ^! N8 A' Z) h+ ~8 S% W# eT. Minami ), T. Kakumu, Y. Takeda, S. Takata
3 Q9 V, ]' _# J) J$ v* nKanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Abstract
/ z0 k+ E5 t  b4 j  S( }. UHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
) g7 m5 P9 f9 Rand In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
+ m0 \0 P! w5 c7 h- u6 `approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
; ?: Z# T# d, \6 x; TZn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
: m/ {2 _4 t8 A6 f8 k. u+ A, Sq1998 Elsevier Science S.A.
& o6 C5 V; g8 V7 CKeywords: Magnetron sputtering; Etching; Fil

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Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering

6 ]4 I1 g% U0 `0 k* `T. Minami*, T. Kakumu, Y. Takeda and S. Takata

Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
2 ?" {2 r2 ]% C, ZAvailable online 26 February 1999.
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6 ]9 p# k1 }* S. mAbstract
1 T* q, G% \% _  A0 H3 H+ yHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (ZnIn+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the ZnIn+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

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