求三篇关于镓铟氧化物薄膜的文献

烟台山

1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
1 _, {- ]5 v' y5 n& V2 [（1996）.
2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
. t3 A( I4 e( m  y% }（1996）.
4 S+ u9 |/ R  L: A4 D期刊：Journal of Vacuum Science & Technology A
* C: n3 a3 P, ~' Z3 f/ z8 G
3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
' I0 i, h( p/ r) ]+ L$ e3 E作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
期刊 Journal of materials reasearch
Vol 17   P3155-3162
E-MAIL:liujianjun505@126.com

gds

给你一篇相关的
% S$ A5 U' x7 d+ m* M/ s
& m. U' `9 i$ s0 O  V

- N2 G! R3 D% e% p. j# M( [
, u, L3 E3 C& ]2 L* \) Z& I
9 N6 |- q" E+ q6 J. F4 A
3 E, E* _$ S  G% O) C2 s
1 _/ n, s  y2 s
) Z( x- w$ M* S
* G, _1 X, n2 X6 _7 ~

5 a" p# y- w/ x9 j0 a

/ Y) V7 q6 ?% ~
, X5 H) p4 J! ^! s7 \" K
& H6 ~7 ^  a! n# w( o! c# q

6 r/ w: a0 w* Q5 A# E$ }Buffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
# q1 L$ G6 t  j* g: u& F+ L9 fchemical vapor deposition and their implementation as buffers
, q& Z) ]& f, ?0 sAnchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
Robert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
% m0 W/ }) F6 s, m: ca Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
IL 60208, USA
b Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
: m. S, B+ z: @c Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
Received 12 March 1999; accepted 10 June 1999

gds

Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering

" Q7 L, {: q& U/ F& z; c
T. Minami ), T. Kakumu, Y. Takeda, S. Takata
, f- n, E  K) H9 uKanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Abstract
Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
9 c1 m1 p$ U- Q% y( Band In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
1 R4 I* u& w' r3 z: M- I6 J: cZn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
5 r4 f! F- h# M( i0 h$ r6 H3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
# Q0 W% e; M9 X1 T* ]3 t/ E0 J* K9 xq1998 Elsevier Science S.A.
0 a* w9 e- A' J; y4 k9 {Keywords: Magnetron sputtering; Etching; Fil

gds

Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering

T. Minami*, T. Kakumu, Y. Takeda and S. Takata
2 ~+ B& e$ Q$ B7 K1 Q. {
Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
2 I9 R0 {* c2 N1 t5 xAvailable online 26 February 1999.

Abstract
Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (ZnIn+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the ZnIn+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

qqdtcmba

关注下，纯支持。
# j1 Y4 c9 x& x0 Y1 r! s2 O非技术性灌水，千斤再顶下：）

hdm7927916

下下来，好啊好哦翻译一下！

ymppdjog

我也有自己的想法呢

$ z3 C0 v( q/ J$ M要么就说吧，你们接着发表哦

cdef217

申明:店铺售的所有2010上海黄页保证电信正版,如不是正版可以退款!!

/ z  X( Z7 x3 i! f5 ^1040页
5 U+ p3 V& Z8 j7 ]9 D% ~
0 r) s: S* \# c: H- @9 B6 t 手比较抖，拍摄的效果不是很理想，朋友们理解哦
9 @0 ^5 K9 N, `% g: \
相信会给你满意的回音
　　购买更多，便宜更多

2010上海电信大黄页,2010上海电信黄页,2010电信黄页,上海2010电信黄页,上海2010电信黄页,2010中国电信黄页,2010中国电信大黄页中国电信黄页，中国电信出品，绝对正版！


0 o& B* P: A% h- k联系电话:13564654510   联系人:陈先生

yiyihkzc

嘿嘿，顶下先。。

gandongdi

什么东西呀，