求三篇关于镓铟氧化物薄膜的文献

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1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
（1996）.
" B* j: _: S) g2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
（1996）.
) t" Q( ?  l& {) Y$ l期刊：Journal of Vacuum Science & Technology A

4 _9 S! s2 |; d( e4 W2 q3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
8 w" c6 F: G/ \: ]6 g3 l期刊 Journal of materials reasearch
. W& I' y# B' N: k8 m8 _Vol 17   P3155-3162
E-MAIL:liujianjun505@126.com

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给你一篇相关的


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7 y4 A5 `9 _& I5 z: DBuffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
) a  S+ P$ E6 o) C1 g, x5 cchemical vapor deposition and their implementation as buffers
3 E5 T/ Z& E- n6 q* F, zAnchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
- H8 R3 y. U* N2 TRobert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
a Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
IL 60208, USA
# v4 ^9 k0 j7 s3 I1 ^b Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
c Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
( w0 y" n6 W& O! W7 ~' R. BNorthwestern UniÍersity, EÍanston, IL 60208, USA
Received 12 March 1999; accepted 10 June 1999

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Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering
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7 A2 Z) s" E8 ?9 l. vT. Minami ), T. Kakumu, Y. Takeda, S. Takata
Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Abstract
; [8 x/ |$ c8 c3 h1 e2 |9 F" [Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
and In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
8 s0 D1 j$ L% y- P# V& i- Vapproximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
Zn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
- W/ J" k, {6 I& i3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
q1998 Elsevier Science S.A.
Keywords: Magnetron sputtering; Etching; Fil

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Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering
, N8 }4 q  q( x+ U  y
T. Minami*, T. Kakumu, Y. Takeda and S. Takata

0 i' W" U6 F. ]3 f# P4 gKanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
: E, u: `4 z6 B5 X2 }* v: aAvailable online 26 February 1999.
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7 h" L, L' D+ k; x' w: d) [6 ^- wAbstract
6 v3 P7 T/ m, l0 }9 YHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (ZnIn+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the ZnIn+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

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