求三篇关于镓铟氧化物薄膜的文献

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1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
: T# ^  H# h% V2 c7 {; r6 s（1996）.
+ W3 b3 l$ H: ^% L6 ]2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
6 b4 O7 i6 G: |0 s6 {9 F（1996）.
) W1 V* B( F, }4 @& w+ x" o! n期刊：Journal of Vacuum Science & Technology A
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4 l0 L+ m! m3 O8 O4 U* s3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
期刊 Journal of materials reasearch
1 n! ^. V- f1 ~" _  T" l4 C2 aVol 17   P3155-3162
$ P7 S6 Q4 N4 f3 eE-MAIL:liujianjun505@126.com

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给你一篇相关的


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Buffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
chemical vapor deposition and their implementation as buffers
4 y: j) S& v8 gAnchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
Robert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
* Y0 y: _8 _% Na Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
IL 60208, USA
& R; q0 U0 o3 z; T* K! Sb Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
* f$ r9 z6 L. kc Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
$ n2 S5 h! c2 [9 Y8 xReceived 12 March 1999; accepted 10 June 1999

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Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering
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* J: y  E2 ^( z$ ]7 QT. Minami ), T. Kakumu, Y. Takeda, S. Takata
# h: r/ S8 e. K+ y7 ?Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Abstract
8 {5 U# {' O+ ]! R% V3 N% mHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
4 d& V( T/ L; D+ D" ^and In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
Zn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
q1998 Elsevier Science S.A.
2 |4 E8 O7 c  r& L$ Z5 {9 zKeywords: Magnetron sputtering; Etching; Fil

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Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering

. W1 V' `) t/ z6 dT. Minami*, T. Kakumu, Y. Takeda and S. Takata
  V# s3 k+ `* J( y' M1 z& ?
3 t) ]* M0 U" K6 QKanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Available online 26 February 1999.
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- H: s$ J6 q; K( V; P" @Abstract
, \9 `* P3 `, y( I# v6 ]Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (Zn:(In+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the Zn:(In+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

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