求三篇关于镓铟氧化物薄膜的文献

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1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
（1996）.
2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
（1996）.
期刊：Journal of Vacuum Science & Technology A
4 e3 M" L) a7 D
3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
0 J5 |) v9 R3 U4 c) E' E7 w期刊 Journal of materials reasearch
% n- q2 w4 P1 DVol 17   P3155-3162
3 J( v9 j$ w; c. b! R2 g; }E-MAIL:liujianjun505@126.com

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给你一篇相关的

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Buffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
chemical vapor deposition and their implementation as buffers
3 Z' y' T7 v! PAnchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
7 L5 B9 o9 `1 c5 eRobert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
, m) Y" A! Y5 B3 J) h8 _a Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
  w" L. b( D: jIL 60208, USA
6 w- G3 u, C0 @7 t8 }0 Jb Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
+ W. J4 n3 d# M4 J8 V0 dNorthwestern UniÍersity, EÍanston, IL 60208, USA
c Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
. T# w: ^2 O# u' SNorthwestern UniÍersity, EÍanston, IL 60208, USA
( W2 w3 V$ [# E4 I3 n! OReceived 12 March 1999; accepted 10 June 1999

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Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering
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" O$ E" T; i! D/ AT. Minami ), T. Kakumu, Y. Takeda, S. Takata
Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
Abstract
0 j! K5 W5 V" b$ I- U" I% g$ aHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
and In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
Zn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
$ s+ P8 q9 N+ W# |* j3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
; B* U8 w- _/ y8 ~/ {6 v+ Aq1998 Elsevier Science S.A.
Keywords: Magnetron sputtering; Etching; Fil

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Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering

T. Minami*, T. Kakumu, Y. Takeda and S. Takata
  V) O7 O& _& P* H1 c* z& G
Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
5 e2 w$ I7 f; J8 p0 TAvailable online 26 February 1999.
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Abstract
% G) `% v  {+ x, e- rHighly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (ZnIn+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the ZnIn+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

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