求三篇关于镓铟氧化物薄膜的文献

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1、    T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1689
（1996）.
2、   T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A 14, 1704
（1996）.
期刊：Journal of Vacuum Science & Technology A
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6 M/ w! m/ ?) @' z, D3、Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
6 c) H( m1 Q& A# U作者 ：Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J. Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf
期刊 Journal of materials reasearch
Vol 17   P3155-3162
E-MAIL:liujianjun505@126.com

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给你一篇相关的

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Buffers for high temperature superconductor coatings.Low temperature growth of CeO films by metal–organic 2
3 E6 C* k; ^% _0 Uchemical vapor deposition and their implementation as buffers
Anchuan Wang a, John A. Belot a, Tobin J. Marks a,), Paul R. Markworth b,
% P; e8 [. K/ a! bRobert P.H. Chang b, Michael P. Chudzik c, Carl R. Kannewurf c
9 V/ ~6 b# K) j- |6 ^a Department of Chemistry, and the Science and Technology Center for SuperconductiÍity, Northwestern UniÍersity, EÍanston,
IL 60208, USA
3 I# J. O% ]! q# @, x( Cb Department of Materials Science and Engineering, and the Science and Technology Center for SuperconductiÍity,
" L# j* ~. `# R4 |Northwestern UniÍersity, EÍanston, IL 60208, USA
+ e5 F4 Y1 ?$ o& w% H, Rc Department of Electrical and Computer Engineering, and the Science and Technology Center for SuperconductiÍity,
Northwestern UniÍersity, EÍanston, IL 60208, USA
0 |0 T9 S8 L0 S7 wReceived 12 March 1999; accepted 10 June 1999

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Preparation of transparent conducting Zn In O films by d.c. magnetron 2 2 5sputtering
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5 R, R# L3 g' W0 tT. Minami ), T. Kakumu, Y. Takeda, S. Takata
Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
' W) O, d7 e2 l6 h  Q" KAbstract
Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO
and In2O3. The films deposited on substrates at a temperature of 3508C using targets with a compositionZn:InqZn.atomic ratio.of
approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the
Zn:InqZn.atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to
3508C exhibited a resistivity of 2–4=10y4 V cm. An average transmittance of above 85% in the visible range was obtained in the films.
q1998 Elsevier Science S.A.
- U) L( Z$ j8 A# e' Q" lKeywords: Magnetron sputtering; Etching; Fil

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Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering
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T. Minami*, T. Kakumu, Y. Takeda and S. Takata

Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
# o+ F8 `) }- B7 x0 L' zAvailable online 26 February 1999.
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Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350°C using targets with a composition (ZnIn+Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the ZnIn+Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350°C exhibited a resistivity of 2–4×10−4 Ω cm. An average transmittance of above 85% in the visible range was obtained in the films.

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