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ZnO:Mn稀磁薄膜光学性质和铁磁行为分析

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发表于 2025-7-22 10:34:39 | 显示全部楼层 |阅读模式
  摘 要:采用脉冲激光沉积技术在蓝宝石(α-Al2O3)衬底上制备了不同Mn掺杂浓度的ZnO薄膜.实验结果表明,合适浓度的Mn的掺人,有利于ZnO:Mn薄膜(002)生长而不形成Mn的氧化物,同时,所有的薄膜均呈现出了室温铁磁特性.随着Mn含量的增加,薄膜光学带隙红移,对应的Mn离子电荷转移跃迁吸收逐渐增强,磁化强度逐渐减小.实验结果支持薄膜的铁磁性起源于替位的Mn离子之间的长程铁磁相互作用,Mn离子增加导致平均磁矩减小,可归因于邻近的Mn离子密度的增加引起的反铁磁作用增强,相对应的sp-d交换作用逐渐增加. ! K( V1 s0 U0 m" u( z4 g
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  关键词:Mn掺杂ZnO;sp-d交换;铁磁特性 ! r5 ^" L' D5 o

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  文章编号:1672-7126(2008)增刊-022-04
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  参考文献:
( ?* f0 [! {' U" A( J# r  [* ?/ D) G) r7 O3 H
  [1]Wan Q,Li Q H,Chen Y J,et al.Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors[J].Appl.Phys Lett.,2004,84(18):3654
7 q& w2 l& _& {# q& n( C& O  D' y' o
  [2]Dietl T,Ohno H,Matsukura F,et al.Science,2000,287:1019 - ~/ a" i) X; U( M  R
& V6 O' }# x- U
  [3]Oiwa A,Slupinski T,Munekata H.Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In,Mn) As/GaSb[J].Appl.Phys.Lett.,2001,78(4):518
* g6 i- [* V  L
9 |  H0 f; e' d, Y; p/ v9 z   [4]Ueda K,Tabata H,Kawai T.Magnetic and electric properties of transition-metal-doped ZnO films[J].Appl.Phys.Lett.,2001,79(7):988 ( q8 K, z: u- U$ `$ c( [

' L! f6 U3 U( ]) Q& R   [5]Sharma P.Nat.Mater.,2003,2:673
7 r2 _4 g+ U7 C* x+ R( G
# n8 h: K2 v9 r! k0 i   [6]Change V Q,Wang D B,Luo X H,et al.Synthesis,optical,and magnetic properties of diluted magnetic semiconductor Zn1-xMxO nanowires via vapor phase growth[J].Appl.Phys.Lett.,2003,83:4020
( A: N6 f  _  R) W. Y0 \$ b* ]+ O
  [7]Ankiewicz A O,Carmo M C,Sobolev N A,et al.Electron paramagnetic resonance in transition metal-doped ZnO nanowires[J].J.Appl.Phys.,2007,101:024324
- ?! c" T* a1 |  w* @& W- x$ Z. T+ G  t5 l/ M
  [8]林益梅,叶志镇,陈兰兰,等.ZnO薄膜的缺陷研究进展[J],真空科学与技术学报,2006,26(5):385-391 ) J" h7 p2 m+ }, E, _8 h, b  o9 o3 q4 a
+ Q1 I# Z3 S" c: }  a* ?% n( Z
  [9]Fukumara T,Jin Z,Ohtomo A,et al.An oxide-diluted magnetic semiconductor:Mn-doped ZnO[J].Appl.Phys.Lett.,1999,75:3366 1 i" q  I& S9 Y# K: X

  j' m2 p/ u5 L8 L+ W   [10]Bylsma R B,Beeker W M,Kossut J,et al.Dependence of energy gap on x and T in Zn1-xMxSe:The role of exchange interaction[J].Phys.Rev.B,1986,33:8207
. K' U% N0 P( ^* O4 @9 I6 b7 C$ P& L4 r: ~8 Y, c
  [11]Mi W B,Bai H L,Liu H,et al.Miernstructure,magnetic,and optical properties of sputtered Mn-doped ZnO films with high-temperature ferromagnetism[J].J.Appl.Phys.,2007,101:023904
! D  h; {  `! E! q' Y4 l2 G1 j) p$ |  N  I6 q9 E
  [12]Grimmeiss H G,Oxren C.Identification of deep centers in ZnSe[J].J.Appl.Phys.,1977,48:5122
) M9 B* T+ g7 H0 ?
# e0 m6 _* k8 L' z' ?9 s2 Y   [13]Kim K J,Park Y R.Spectroscopic ellipsometry study of optical transitions in Zn1-xMxO alloys[J].Appl.Phys.Lett.,2002,81:1420 ' ^) P& [8 R* E* D$ I! j1 e! t6 ~
3 c# ~: a9 f4 i$ }* ?& i
  [14]Yoo Y Z,Fukumura T,Jin Z W,et al.ZnO:CoO sofid solution thin films[J].J.Appl.Phys.,2001,90:4246
0 ]- J+ b! I7 c& ^  \
+ D' F" {" W3 l   [15]Ivill M,Pearton S J,He Y W,et.al.Magnetization dependence on cartier doping in epitaxial ZnO thin films co-doped with Mn and P[J].J.Appl:Phys.,101,2007:123909 + s7 s7 y7 W  M

; E+ B' X! C2 Z) ~8 Y& b   [16]Iusan D,Sanyal B,Eriksson O.Theoretical stndy of the magnetism of Mn-doped ZnO with and without defects[J].Phys.Rev.B,2006,74:235208
7 X2 C) _8 A& ]0 ]# u* d2 |% L  |
4 x" ]" ~" B; `; @* G+ P   [17]Neal J R,Behan A J,Ibrahim R M,et.al.Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal Doped ZnO Thin Films[J].Phys.Rev.L,2006,96:197208 ( r! _3 w8 Q3 A1 y, E5 Q

# F: W) B' q- F: ^  |   [18]Szczyko J,Mac W,Twardowski A.Antiferromagnetic p-d exReview B,1999,59:12935
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