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ZnO:Mn稀磁薄膜光学性质和铁磁行为分析

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发表于 2025-7-22 10:34:39 | 显示全部楼层 |阅读模式
  摘 要:采用脉冲激光沉积技术在蓝宝石(α-Al2O3)衬底上制备了不同Mn掺杂浓度的ZnO薄膜.实验结果表明,合适浓度的Mn的掺人,有利于ZnO:Mn薄膜(002)生长而不形成Mn的氧化物,同时,所有的薄膜均呈现出了室温铁磁特性.随着Mn含量的增加,薄膜光学带隙红移,对应的Mn离子电荷转移跃迁吸收逐渐增强,磁化强度逐渐减小.实验结果支持薄膜的铁磁性起源于替位的Mn离子之间的长程铁磁相互作用,Mn离子增加导致平均磁矩减小,可归因于邻近的Mn离子密度的增加引起的反铁磁作用增强,相对应的sp-d交换作用逐渐增加.
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  关键词:Mn掺杂ZnO;sp-d交换;铁磁特性 / z# I2 }+ B- ~6 v; Z

/ e' `1 u6 v4 C5 @! f/ \   分类号:TB7 文献标识码:A
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  文章编号:1672-7126(2008)增刊-022-04
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  参考文献:
  T7 t6 }. Y# _. l, a, q7 t. k6 q
  [1]Wan Q,Li Q H,Chen Y J,et al.Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors[J].Appl.Phys Lett.,2004,84(18):3654 ( C* x8 J9 L1 P, O
1 s& }  b- G* l( ^  l% ]
  [2]Dietl T,Ohno H,Matsukura F,et al.Science,2000,287:1019
3 |+ N, o- P" I0 m! ]9 i; g. ^6 I% |5 ^3 H! E& d- c
  [3]Oiwa A,Slupinski T,Munekata H.Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In,Mn) As/GaSb[J].Appl.Phys.Lett.,2001,78(4):518
/ K! o5 R' o# C! I8 w5 m; |7 ]! ^: y/ K" {& ]% S
  [4]Ueda K,Tabata H,Kawai T.Magnetic and electric properties of transition-metal-doped ZnO films[J].Appl.Phys.Lett.,2001,79(7):988
8 W, b% u  \9 ]! u7 V2 _" e
6 G, k% T' l5 Y/ p4 Y8 l   [5]Sharma P.Nat.Mater.,2003,2:673 ' q' r- [3 F, f7 }, ~0 s0 N6 n8 l
, N" K* O, \, I8 u& l# j
  [6]Change V Q,Wang D B,Luo X H,et al.Synthesis,optical,and magnetic properties of diluted magnetic semiconductor Zn1-xMxO nanowires via vapor phase growth[J].Appl.Phys.Lett.,2003,83:4020 * |* E# Y, j. O- q: D
5 e9 |% n) A: e
  [7]Ankiewicz A O,Carmo M C,Sobolev N A,et al.Electron paramagnetic resonance in transition metal-doped ZnO nanowires[J].J.Appl.Phys.,2007,101:024324 8 B! _$ l# A3 B' K
7 H" n( I3 ]# m* X+ X2 T5 s
  [8]林益梅,叶志镇,陈兰兰,等.ZnO薄膜的缺陷研究进展[J],真空科学与技术学报,2006,26(5):385-391
+ _4 ^2 e# X7 t+ P* D3 Z, ]
2 d  ?; f+ H% M: g) M/ W# h   [9]Fukumara T,Jin Z,Ohtomo A,et al.An oxide-diluted magnetic semiconductor:Mn-doped ZnO[J].Appl.Phys.Lett.,1999,75:3366 9 S/ v, a7 D. Z- e: m! n- v

. D5 \3 P4 a4 {. ]   [10]Bylsma R B,Beeker W M,Kossut J,et al.Dependence of energy gap on x and T in Zn1-xMxSe:The role of exchange interaction[J].Phys.Rev.B,1986,33:8207 & _" S, `9 a% \5 P4 f' T! a
! R+ ]+ c/ I$ U& D9 }% h8 N
  [11]Mi W B,Bai H L,Liu H,et al.Miernstructure,magnetic,and optical properties of sputtered Mn-doped ZnO films with high-temperature ferromagnetism[J].J.Appl.Phys.,2007,101:023904
6 `1 M7 x; s: p9 Y% f% e; O+ i! K* V5 a8 e$ w6 O0 e( V
  [12]Grimmeiss H G,Oxren C.Identification of deep centers in ZnSe[J].J.Appl.Phys.,1977,48:5122 - n; R$ |# O4 l
$ q/ N+ t2 A! o4 |
  [13]Kim K J,Park Y R.Spectroscopic ellipsometry study of optical transitions in Zn1-xMxO alloys[J].Appl.Phys.Lett.,2002,81:1420
. \0 H1 ^4 B" h. r/ i. n+ n! G
! y! ]/ I6 x0 A: x$ `6 {   [14]Yoo Y Z,Fukumura T,Jin Z W,et al.ZnO:CoO sofid solution thin films[J].J.Appl.Phys.,2001,90:4246
* i2 s( x3 z+ i1 E( C  _* ?
% E1 M* X; T4 A) G  x   [15]Ivill M,Pearton S J,He Y W,et.al.Magnetization dependence on cartier doping in epitaxial ZnO thin films co-doped with Mn and P[J].J.Appl:Phys.,101,2007:123909
/ U: w% y% ~* n# `: v& ]: C
) }, L( v' V7 s0 Y0 D- [+ g   [16]Iusan D,Sanyal B,Eriksson O.Theoretical stndy of the magnetism of Mn-doped ZnO with and without defects[J].Phys.Rev.B,2006,74:235208 ( {1 \* ~: L5 {0 F- c
! c; C+ @3 Z  C& r; q
  [17]Neal J R,Behan A J,Ibrahim R M,et.al.Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal Doped ZnO Thin Films[J].Phys.Rev.L,2006,96:197208
2 q" n+ `( i4 {% d6 p4 z1 }5 b3 n6 v' j5 N/ m  v. |
  [18]Szczyko J,Mac W,Twardowski A.Antiferromagnetic p-d exReview B,1999,59:12935
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