用薄膜内耗仪测定薄膜应力AN APPROACH TO MEASURING STRESS OF THIN FILM ON Si CANTILEVER BY CARRIER FREQUENCY- 。
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/ G7 T" G! ~9 l1 |) a 【作者】 李健； M.Wuttig； ) r8 n t, B8 h* j
【Author】 LI JianShanghai Baosteel R & D Center, Shanghai 201900M. WuttigDepartment of Materials, University of Maryland, MD 20742-2115, USA 【机构】 上海宝山钢铁股份公司分析技术中心； Department of Materials； University of Maryland； MD 20742-2115； USA 上海 201900； ' c: _) [( T1 j: X& O$ A$ j
2 g$ S- p$ l' o2 c. T" Y3 y【摘要】 采用一种新的薄膜内耗仪观测Ni50Ti50薄膜样品的形变(薄膜形变造成薄膜与载膜硅片之间的界面应力)随温度或其 它环境参量的变化.同步测量了薄膜的内耗、动态模量、薄膜应力以及Ni50Ti50薄膜的相变过程. [url=]更多[/url][url=]还原[/url]
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【Abstract】 An approach to measuring stress of thin film on Si cantilever by carrier frequency is presented. The experimental result of the Ni50Ti50 film shows it is an available means to detect the deflection and stress on the cantilever. The most important significant is that the internal friction, modulus defect and deflection of the sample can be tested simultaneously. Some of important results of phase transformation in Ni50Ti50 film have been obtained by this special way. [url=]更多[/url][url=]还原[/url]% Y7 p$ w1 I5 o7 \
【关键词】 内耗； 形状记忆效应； 薄膜应力；
, F$ ^1 |! [3 _) L W【Key words】 internal friction； shape memory effect； thin film stress；
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