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[转贴] 以复合材料为基底的ITO薄膜红外隐身特性研究

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发表于 2010-12-22 11:07:12 | 显示全部楼层 |阅读模式
以复合材料为基底的ITO薄膜红外隐身特性研究张笑梅 乔冬平 鲁先孝中国船舶重工集团公司第七二五研究所,河南洛阳471039摘 要:利用直流磁控溅射法在树脂基复合材料基底上制备了ITO低红外发射率薄膜。选择了低发射率树脂作为基底复合材料的基体树脂。通过对材料表面进行表征、测试材料表面电阻率及红外发射率,研究了材料的红外隐身性能。结果表明,材料的红外发射率随ITO膜表面电阻率的增加先增加,后趋于一定值。[著者文摘]
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关键词:ITO膜 红外隐身 红外发射率4 U' T8 }* P% {' I" ?3 G4 N
分类号: O484[著者标引]文献标识码:A文章编号:1003-1545(2010)04-0024-04栏目信息:材料研究
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4 J$ ?+ ?- G4 w/ m7 G% {6 cInfrared Stealth Properties of ITO Films on Polymer Matrix Composites SubstratesZHANG Xiao-mei,QIAO Dong-ping,LU Xian-xiao Luoyang Ship Material Resarch Institute,Luoyang 471039,ChinaAbstract:Indium-tin oxide(ITO) films were prepared by reactive magnetron sputtering on polymer matrix composites substrates.The resin with the lowest infrared emissivity was selected as the matrix of the composites substrates.The infrared stealth properties of the material were studied by the surface characterization of the material and the test of surface resistivity and infrared emissivity.With increase of the ITO film surface resistivity,the infrared emissivity of the material increases first,then tends to a certain value.[著者文摘]
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( @% P0 I- T/ K* ?8 {7 ]" LKey words:ITO film; Infrared stealth; Infrared emissivity

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