SiO2和HfO2薄膜光学性能的椭偏光谱测量

xx_912

SiO2和HfO2薄膜光学性能的椭偏光谱测量
: j& A7 N: B, Z* B; @5 j* X3 y吴倩 陈松林 马平 王震 罗晋 潘峰成都精密光学工程研究中心,四川成都610000摘　要:结合XRD和原子力显微镜等方法，利用椭圆偏振光谱仪测试了单层SiO2薄膜（K9基片）和单层HfO2薄膜（K9基片）的椭偏参数，并用Sellmeier模型和Cauchy模型对两种薄膜进行拟合，获得了SiO2薄膜和HfO2薄膜在300-800nm波段内的色散关系。用X射线衍射仪确定薄膜结构，并用原子力显微镜观察薄膜的微观形貌，分析表明：SiO2薄膜晶相结构呈现无定型结构，HfO2薄膜的晶相结构呈现单斜相结构；薄膜光学常数的大小和薄膜的表面形貌有关；Sellmeier和Cauchy模型较好地描述了该波段内薄膜的光学性能，并得到薄膜的折射率和消光系数等光学常数随波长的变化规律。[著者文摘]
: J  ?* R' Y& z$ d0 `) l- g
关键词:薄膜 光学参数 椭偏测量 光谱
分类号:　O436[著者标引]文献标识码：A文章编号：1672-3392（2010）02-0050-04栏目信息：光电测量
相关文献:主题相关 全文快照　　　

Spectroscopic Ellipsometry for Determining the Optical Properties of SiO2 and HfO2 Thin FilmsWU Qian CHEN Song-lin MA Ping WANG Zhen LUO Jin PAN Feng Chengdu Fine Optical Engineering Research Center, Chengdu 610000, China Abstract:XRD, AFM and SE were used to measure and analyze optical properties of SiO2 and HfO2 thin films. Sellmeier and Cauchy dispersion model were used to calculate the refractive index, extinction coefficient and thickness of thin films in the visible region of the spectrum between 3004800 nrn. The X-ray diffraction （XRD） was used to confirm the phase structure of the thin films, and the atomic force microscopy （AFM） was used to observe the surface microstructure of the thin films. The results show that the phase structure of SiO2 film is amorphism, the phase structure of HfO2 film is monoclinic. The thin film optical properties was correlative with thin film microstructure. Sellmeier and cauchy dispersion model could describe optical properties of SiO2 and HfO2 film very well and the variation rule of the optical properties with wavelength was obtained.[著者文摘]

" G: F. y) y5 s( T+ c, h: MKey words:thin film optical properties; spectroscopic ellipsometry; spectrum

bairuizheng

不错好资料。

dongmaojin

看看资料，内容是什么。

xj2008cg

谢谢楼主的资料

xj2008cg

谢谢楼主的好资料

dede

看看资料，内容是什么