PTCDA／ITO表面和界面的X射线光电子能谱分析

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PTCDA／ITO表面和界面的X射线光电子能谱分析欧谷平[1,2] 宋珍[3] 桂文明[1] 张福甲[1][1]兰州大学物理科学与技术学院,甘肃兰州730000 [2]湖南科技大学物理学院,湖南湘潭411201 [3]北京机械工业学院基础部,北京100085摘　要:利用X射线光电子能谱对PTCDA／p-Si有机／无机光电探测器中PTCDA／ITO表面和界面进行了测试分析。结果表明，茹环上的C原子的结合能为284．6eV，酸酐中的C原子的结合能为288．7eV，并存在来源于ITO膜中的氧对C原子的氧化现象，界面处C（1s）谱中较高结合能峰消失，且峰值向低结合能发生化学位移；C=O键中O原子的结合能为531．5eV，C-O-C键中的O原子的结合能为533．4eV。[著者文摘]
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6 |8 k9 \) H+ d关键词:表面及界面 X光电子能谱（XPS） PTCDA／ITO
分类号:　TN304 O621.1[著者标引]文献标识码：A文章编号：1000-0593（2006）04-0753-04栏目信息：
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" L  R0 B' Z  v+ F0 ?) {+ E& wSurface and Interface Analysis of PTCDA/ITO Using X-Ray Photoelectron Spectroscopy （XPS）OU Gu-ping, SONG Zhen , GUI Wen ming , ZHANG Fu-jia1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China ;2. School of Physics, Hunan University of Science and Technology, Xiangtan 411201, China; 3. School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, ChinaAbstract:Xray photoelectron spectroscopy （XPS） of surface and interface of PTCDA/ITO in PTCDA/p-Si organic-onqnorganic photoelectric detector was investigated. From Cls fine spectrum we found that the binding energy of C atoms in perylene rings was 284.6 eV; and the binding energy of C atoms in acid radical was 288.7 eV; moreover, some C atoms were oxidized by O atoms from ITO. The binding energy of O atoms in C=O bonds and C-O-C bonds was 531.5 and 533.4 eV, respectively. At the interface, the peak of high binding energy in C1s spectrum disappeared, and the main peak shifted toward lower binding energy.[著者文摘]
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Key words:Surface and interface; X-ray photoelectron spectroscopy（XPS） ; PTCDA/ITO