MEMS开关中氮化硅薄膜工艺研究

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MEMS开关中氮化硅薄膜工艺研究
# M$ M. u& ?0 m4 A许淡清 于映福州大学物理与信息工程学院,福建福州350002摘　要:分析了沉积薄膜厚度、PECVD的薄膜沉积温度、反应气体形成的杂质以及多层薄膜之间热应力匹配等因素对薄膜残余应力的影响．应用光刻分割聚酰亚胺（PI）牺牲层、分层生长氮化硅薄膜及快速热退火等工艺减小薄膜残余应力，成功生长出了合格的氮化硅薄膜．[著者文摘]
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8 g8 {& Q8 z3 |+ j; \关键词:氮化硅 薄膜 残余应力 MEMS开关
分类号:　TN405[著者标引]文献标识码：A文章编号：1000-2243（2009）01-0050-04栏目信息：
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& P! I7 j9 ?% g8 D  GStudy on the silicon -nitride film in MEMS switchesXU Dan- qing, YU Ying College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350002, ChinaAbstract:The factors of exerting effect upon the residual stress were analyzed. These factors basically include the thickness of deposition film, the suitable temperature during PECVD, the contanminations created by reaction gas and the match of the thermal stresses in multi - layers. The residual stresses upon siliconnitride thin film are controled by dividing the PI sacrificial layer with lithography, depositing by layer as well as rapid thermal annealing. In the end, the qualified film is successfully deposited.[著者文摘]
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Key words:silicon- nitride; film; residual stress; MEMS switch