化合物半导体薄膜工艺参数的分光光度法测试

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化合物半导体薄膜工艺参数的分光光度法测试
杨柳滨[1] 江素华[1] 郝茂盛[2] 李越生[1][1]复旦大学材料科学系国家微分析中心,上海200433 [2]上海蓝光科技有限公司,上海201210摘　要:化合物半导体的组分与膜厚等是光电子器件工艺监控中的关键工艺参数，因为这些参数直接影响着器件的光学和电学等性能。介绍了通过分光光度法和Forouhi．Bloomer离散方程相结合的方法测定化合物半导体薄膜折射率n与膜厚d，通过材料组分与折射率之间关系的分析进而得到化舍物组分％，该结果用SIMS和XRD方法得到验证。由于分光光度法能够快速无损地测量反射率，并且由该反射率能够更准确地测到其组分信息，因此在实际的生产在线监控和工艺改进中有良好的应用前景。[著者文摘]

* f* u8 q& s% Q' F: [关键词:分先光度法 Forouhi-Bloomer离散方程 铝镓氦 组分分析
- G4 e! A( j  E6 n分类号:　TN304.2[著者标引]文献标识码：A文章编号：1003-353X（2009）04-0351-04栏目信息：封装、测试与设备
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+ E/ S, D. D6 `! `& UApplication of Spectrophotometry in the Process Parameters Determination of Compound Semiconductor FilmYang Liubin, Jiang Suhua, Hao Maosheng, Li Yuesheng Microanalysis Center, Dept. of Material Science, Fudan University, Shanghai 200433, China ; 2. Epilight Technology Co. , Ltd., Shanghai 201210, China）Yang Liubin, Jiang Suhua, Hao Maosheng, Li Yuesheng Microanalysis Center, Dept. of Material Science, Fudan University, Shanghai 200433, China ; 2. Epilight Technology Co. , Ltd., Shanghai 201210, ChinaAbstract:Multi-component and film thickness of compound semiconductor are key process parameters which will directly affect the optical and electrical properties of the device and therefore are very important in the process monitoring and control in optoelectronic device manufacturing. Spectrophotometry and Forouhi- Bloomer dispersion equations were introduced to calculate the film thickness d and the refractive index n of the compound semiconductor. By analyzing with the theoretical n, the elemental component x was determined. SIMS and XRD ts verified the experimental results. For the fast and nondestructive reflectance measurement and the accurate component determination, this technology can be applied to the industrial online process control and improvement.[著者文摘]
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9 O9 r8 G+ d1 S) OKey words:spectrophotometry ; Forouhi-Bloomer dispersion equations ; A1GaN ; multi-component determination

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化合物半导体薄膜工艺参数的分光光度法测试
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