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[转贴] 飞秒激光辐照下单晶硅薄膜中超快能量输运的数值模拟

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发表于 2009-7-20 07:03:51 | 显示全部楼层 |阅读模式
飞秒激光辐照下单晶硅薄膜中超快能量输运的数值模拟: c9 k1 A& U# i6 o  J& J& Y7 t
刘国栋 罗福 王贵兵 李剑峰 付博中国工程物理研究院流体物理研究所,四川绵阳621900摘 要:利用载流子输运模型对飞秒激光辐照下单晶硅亚微米薄膜中的能量输运过程进行数值模拟。研究了不同辐照能量密度和不同激光波长对载流子密度和温度超快变化过程的影响规律。结果表明,在800nm激光辐照下,不同入射能量密度仅影响载流子密度和温度响应的峰值,但达到峰值的时刻不变。平衡态的恢复过程受入射能量密度影响很小。在不同波长激光辐照下,光子能量越大,载流子密度和温度达到峰值所用时间越短,对应峰值越大,但衰减速度也越快。当入射光子能量大于单晶硅的直接带隙时,快速衰减时间常数可以与载流子能量弛豫时间相当。[著者文摘]
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3 K) y: P( k6 \; I7 C: u关键词:飞秒激光 能量输运 数值模拟 单晶硅薄膜$ Z1 @6 S1 C. E5 r$ _
分类号: TN249[著者标引]文献标识码:A文章编号:1002-2082(2009)02-0325-05栏目信息:激光技术
8 `) ~9 T3 Z$ w7 D8 ~& [相关文献:主题相关 全文快照   0 _' [8 x; z. U

# t% D  W1 i% CNumerical simulation of ultrafast energy transport in monocrystalline silicon films under femtosecond laser irradiationLIU Guo-dong, LUO Fu, WANG Gui-bing, LI Jian-feng, FU Bo Institute of Fluid Physics, CAEP, Mianyang 621900, ChinaAbstract:The process of the ultrafast energy transport in monocrystalline silicon sub-micron films irradiated with femtosecond laser was simulated using the carrier transport model based on the Boltzmann transport equation. The effects of different irradiation energy density and laser wavelength on the carrier density and the process of temperature ultrafast variation were investigated. The numerical calculation results show that, irradiated at 800 nm, the incident energy density influences the peaks of the carrier density and temperature only, but the occurrence time of their peaks does not change. The recovery process toward the equilibrium state is hardly influenced by the incident energy density. Under the irradiation of different wavelengths, the higher the photon energy is, the less time the carrier density and temperature take to reach the peak values, the bigger the corresponding peak appears and the faster the attenuation velocity becomes. The time constant of the fast attenuation is equal to the carrier energy relaxation time when the incident photon energy is larger than the band-gap of the monocrystalline silicon.[著者文摘]6 b. L9 B' p. Y+ G2 p6 [

/ i# @: w7 S0 f2 s9 f+ mKey words:femtosecond laser; energy transport; numerical simulation; monocrystalline silicon film

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发表于 2009-8-8 23:34:25 | 显示全部楼层
你好啊,过来看看!呵呵3
发表于 2009-8-9 00:22:28 | 显示全部楼层
快速衰减时间常数可以与载流子能量弛豫时间相当
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