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发表于 2009-2-13 11:56:41
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原子力显微镜结合拉曼光谱仪对不同氧分压制备ZnO薄膜性能研究
& @- z+ e! V8 a- X/ E( X' h张涛[1] 潘石[1] 刘明[2] 王贺陶[1] 赵万利[1][1]大连理工大学,物理与光电工程学院,近场光学与纳米技术研究所,大连116024 [2]大连理工大学,物理与光电工程学院,三束材料改性国家重点实验室,大连116024摘 要:利用磁控溅射技术,在硅基底上(100)成功制备了ZnO薄膜。分别利用原子力显微镜和拉曼光谱仪对其表面形貌、颗粒度、粗糙度和拉曼光谱性能进行表征、分析,两种方法所得结论基本吻合。研究结果表明,ZnO薄膜结晶度良好,颗粒分布均匀,具有良好的c轴取向。原子力显微镜表征结果表明,氧分压小于50%时,ZnO颗粒度和RMS粗糙度随通入氧气分压增加而减小:氧分压大于50%时,ZnO颗粒度和RMS粗糙度趋近于一常数。拉曼光谱表征结果表明,ZnO的拉曼特征峰E2(high)表现出尺寸效应,即随氧气增加(小于81.25%)ZnO颗粒度减小,使特征蜂的蜂位向高频移动,特征峰的半高宽增大;ZnO薄膜内部张力随氧气分压增加(小于81.25%)而减小。[著者文摘]
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关键词:ZnO薄膜 原子力显微镜 拉曼光谱
8 h" w0 f$ i' {分类号: TN248.1[著者标引]文献标识码:A文章编号:0253-2743(2008)03-0062-02栏目信息:激光系统与应用% C/ z6 [; A( w4 D
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Study on characteristics of ZnO films deposition under various oxygen partial pressure using atomic force microscopy and Raman spectroscopyZHANG Tao, PAN Shi, LIU Ming, WANG He - tao, ZHAO Wan - li1. Department of Physics, Dalian University of Technology, Dalian 116024, China; 2. Star Key Lab. of Materials Modification by Laser, Ion and Electron, Dalian University of Technology, Dalian 116024, ChinaAbstract:High c - axis oriented ZnO films on Si (100) are deposited by radio- frequency reactive magnetron sputtering. There are several characteristics of ZnO films analysed and studied using atomic force microscopy (AFM) and Raman spectroscopy, such as topography, gains, RMS roughness and Raman spectroscopy. It is found that the results of atomic force microscopy are approximately same with that of Raman spectroscopy. Results of AFM are as following. With increasing the oxygen partial pressure from 8.75% to 50%, grains and RMS roughness of ZnO films decreased. When the oxygen partial pressure exceeds 50%, grains and RMS roughness of ZnO films is roughly a constant. Results of Raman spectroscopy are as following. With increasing the oxygen partial pressure from 8. 75% to 81.25%, Raman peak E2( high )moves to high frequency,FWHM of E2(high) increased and the tensility of ZnO films decreased.[著者文摘]
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Key words:ZnO films; atomic force microscope; Raman spectrum |
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