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求ZnO薄膜的拉曼标准光谱

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发表于 2009-2-13 10:16:01 | 显示全部楼层 |阅读模式
想请教大家ZnO相关的拉曼光谱知识,先谢谢了
发表于 2009-2-13 11:56:41 | 显示全部楼层
原子力显微镜结合拉曼光谱仪对不同氧分压制备ZnO薄膜性能研究
& @- z+ e! V8 a- X/ E( X' h张涛[1] 潘石[1] 刘明[2] 王贺陶[1] 赵万利[1][1]大连理工大学,物理与光电工程学院,近场光学与纳米技术研究所,大连116024 [2]大连理工大学,物理与光电工程学院,三束材料改性国家重点实验室,大连116024摘 要:利用磁控溅射技术,在硅基底上(100)成功制备了ZnO薄膜。分别利用原子力显微镜和拉曼光谱仪对其表面形貌、颗粒度、粗糙度和拉曼光谱性能进行表征、分析,两种方法所得结论基本吻合。研究结果表明,ZnO薄膜结晶度良好,颗粒分布均匀,具有良好的c轴取向。原子力显微镜表征结果表明,氧分压小于50%时,ZnO颗粒度和RMS粗糙度随通入氧气分压增加而减小:氧分压大于50%时,ZnO颗粒度和RMS粗糙度趋近于一常数。拉曼光谱表征结果表明,ZnO的拉曼特征峰E2(high)表现出尺寸效应,即随氧气增加(小于81.25%)ZnO颗粒度减小,使特征蜂的蜂位向高频移动,特征峰的半高宽增大;ZnO薄膜内部张力随氧气分压增加(小于81.25%)而减小。[著者文摘]
5 j0 v; J  q6 W: Q$ A$ o( V3 O( k2 m* r+ V5 R0 s$ W  r& ?
关键词:ZnO薄膜 原子力显微镜 拉曼光谱
8 h" w0 f$ i' {分类号: TN248.1[著者标引]文献标识码:A文章编号:0253-2743(2008)03-0062-02栏目信息:激光系统与应用% C/ z6 [; A( w4 D
相关文献:主题相关 全文快照   
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Study on characteristics of ZnO films deposition under various oxygen partial pressure using atomic force microscopy and Raman spectroscopyZHANG Tao, PAN Shi, LIU Ming, WANG He - tao, ZHAO Wan - li1. Department of Physics, Dalian University of Technology, Dalian 116024, China; 2. Star Key Lab. of Materials Modification by Laser, Ion and Electron, Dalian University of Technology, Dalian 116024, ChinaAbstract:High c - axis oriented ZnO films on Si (100) are deposited by radio- frequency reactive magnetron sputtering. There are several characteristics of ZnO films analysed and studied using atomic force microscopy (AFM) and Raman spectroscopy, such as topography, gains, RMS roughness and Raman spectroscopy. It is found that the results of atomic force microscopy are approximately same with that of Raman spectroscopy. Results of AFM are as following. With increasing the oxygen partial pressure from 8.75% to 50%, grains and RMS roughness of ZnO films decreased. When the oxygen partial pressure exceeds 50%, grains and RMS roughness of ZnO films is roughly a constant. Results of Raman spectroscopy are as following. With increasing the oxygen partial pressure from 8. 75% to 81.25%, Raman peak E2( high )moves to high frequency,FWHM of E2(high) increased and the tensility of ZnO films decreased.[著者文摘]
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Key words:ZnO films; atomic force microscope; Raman spectrum

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发表于 2009-2-13 11:58:02 | 显示全部楼层
掺杂和未掺杂氧化锌薄膜的拉曼光谱达文欣 吴世法 刘琨 陈文 潘石大连理工大学物理系,大连116024摘 要:利用拉曼光谱分别对不同衬底上,未掺杂和掺杂以及掺杂浓度不同的ZnO薄膜进行了系统的分析研究。其中ZnO薄膜均由溶胶-凝胶法制得,掺杂源为LiCl。测得的拉曼光谱显示,Pt/Ti/SiO2/Si衬底上生长的ZnO薄膜的拉曼特征峰(437cm^-1)的强度明显高于SiO2/Si衬底上ZnO薄膜的拉曼特征峰的强度,说明Pt/Ti/SiO2/Si衬底上ZnO的晶化程度比SiO2/Si上ZnO的晶化程度高;但ZnO拉曼特征峰的位置和半高宽并没有发生变化,说明两种衬底上ZnO薄膜中应力大小没有发生变化。掺Li^+后。580cm^-1处的峰位向高频方向移动,且掺杂浓度越大频移量越大,说明掺杂已经在不同程度上引起了ZnO晶体中自由载流子浓度的变化。此外,还分析了掺Li^+未在很大程度上引起ZnO晶格畸变的原因。[著者文摘]8 Q" J; j! r* W& o4 v. @$ N

! o! y# S  {. L+ W+ i关键词:ZnO薄膜 拉曼光谱 掺杂 Li^+5 z- ]* p# t+ Y' _( j  p
分类号: O657.37[著者标引]文献标识码:A文章编号:1004-5929(2006)01-0043-05栏目信息:1 |+ \; {7 x. Y  y
相关文献:主题相关 全文快照   ) M9 ?. O/ S2 \% _/ S

2 ?: w# B1 t* s( `/ j' gRaman Spectra of Undoped and Doped ZnO Thin FilmsDA Wen-xin, WU Shi-fa, LIU Kun, CHEN Wen, PAN Shi Department of Physics, Dalian University of Technology, Dalian 116024Abstract:In this paper, the structure characteristics and the phase composition of undoped ZnO thin films and doped ZnO thin films with LiCl are studied with Raman spectroscopy. All the ZnO thin films are prepared by sol - gel spin - coating technique and two different kinds of substrates are used in the preparation of ZnO thin films, Pt/Ti/SiO2/Si and SiO2/Si. The Raman spectrum show that the intensity of E2 peaks (437cm^-1) of ZnO thin film on the former substrate is significant stronger than that of ZnO thin film on the latter one, which indicates that the crystallinity content of the ZnO on the former substrate is higher than that of on the latter one. The result is also shown that the positions and full width at half maximum of E2 peaks are the same, which indicates that the tensile residual or stress in ZnO on the two kinds of substrates is the same. For the doped ZnO thin films, the A1 (LO) mode (580cm^-1) frequency shifts to higher wavenumbers. And the shiftline increases with the doping concentration, which indicates that doping can change the free carrier concentration in the ZnO thin films in various degrees. Furthermore, we found the phenomenon which doping did not cause intensive lattice aberration and analyzed the reason.[著者文摘]$ g3 h. R- T2 z7 d4 t! ]

8 V1 Y# n, i  M5 cKey words:ZnO thin film; Raman spectroscopys Doping; Li^+

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发表于 2009-2-13 22:09:44 | 显示全部楼层
Thank you very much!
 楼主| 发表于 2009-2-13 22:14:51 | 显示全部楼层
谢谢gds  ^_^
发表于 2009-3-4 04:49:41 | 显示全部楼层

路过。

嗯,虽然路过。% b5 V% k1 m: U' p* m" s+ k0 L5 [0 k
还是厚道的顶一下

5 j8 C2 ?0 ?6 b4 I) O---------
发表于 2009-3-20 07:13:27 | 显示全部楼层

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