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Receives Patent for New Method of Making Thin Films
! z+ ] j* X$ a2 oAnonymous. CircuiTree. Troy: Nov 2007. Vol. 20, Iss. 11; pg. 25, 1 pgs
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) ~2 `9 Y& ~# OAbstract (Summary)
6 V# O0 o M4 [4 cDow Corning Corporation's Advanced Technologies and Ventures Business received a U.S. patent on a new method for making low dielectric constant (low-k) silicon carbide and hydrogenated silicon oxycarbide thin films. |
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