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Receives Patent for New Method of Making Thin Films
3 C' h5 ~6 V3 M8 F1 z8 XAnonymous. CircuiTree. Troy: Nov 2007. Vol. 20, Iss. 11; pg. 25, 1 pgs
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6 M5 i/ i& @* d- o2 U9 RAbstract (Summary)
1 Y5 c2 k, g* F) r3 DDow Corning Corporation's Advanced Technologies and Ventures Business received a U.S. patent on a new method for making low dielectric constant (low-k) silicon carbide and hydrogenated silicon oxycarbide thin films. |
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