There are a number of ways to modify the nucleation density of1 b- ^5 c( a2 i x; E
depositing atoms on substrate surfaces including:
* z8 e N: t! t• Change the deposition temperature( ?/ M% y$ Q/ l) [7 Z+ H3 Q: q& b1 K
increasing—increases reaction with the surface; increases surface mobility
5 X q9 f& i6 h* v# d& Jdecreasing—decreases surface mobility; F' `. @( [2 O" ?* X/ }
• Increase the deposition rate to increase collision probability of the adatoms0 ~; }& D) K9 L" g9 S. g. c
• Change the surface chemistry to make the surface more2 \7 D' Y- H# q; M' i
reactive—e.g., cleaning,oxygen treatment of polymer
. K% A; `" x+ Ysurfaces
& p3 V4 g: s: p, R9 f0 [• Sensitizing the surface by the addition of “nucleating agents”
/ l( z( P S& `9 Y% M• Generation of nucleation sites on the surface—e.g., lattice
" F1 O* M, T+ S. V3 Kdefects, charge sites on insulators by
, t) ?2 X5 u0 d2 V$ ?+ A0 c© energetic particle bombardment to produce lattice
$ E6 w1 ~+ L' ^* P6 A3 Zdefects1 Y+ \" {) u& g* o; Q' k
© incorporation of species into the surface by ion1 s- w- {3 W0 N3 ?0 I1 F. H# e% W; y
implantation or chemical substitution$ m9 s1 c3 `* e/ S8 O# \
© electron bombardment —charge centers on1 _8 `% V8 Q) V: g
insulator surfaces3 _6 u q: Z: U' E8 a
© photon bombardment ]—charge centers on insulator G! t- v% {/ V
Surfaces
$ [( d% u9 |+ {% h2 k% Y! w' t• Co-deposition or absorption of reactive species
& n) \6 F" ^; i, p9 R• Surface morphology—roughening or smoothing
4 o2 x9 v& |* ]) |4 s- V( {• Creation of a new surface—“basecoat” or “glue layer” |