MEMS应用中的TiN薄膜工艺研究

MEMS应用中的TiN薄膜工艺研究
杨梅[1,2] 舒琼[1] 陈兢[1,2][1]北京大学微电子学研究院,北京100871 [2]中国科学院传感技术联合国家重点实验室,上海200050摘　要:运用反应射频溅射的方法进行了TiN薄膜的制备，通过改变关键工艺参数，如氩气氮气比、气体压力等，研究工艺参数对TiN薄膜特性的影响．论文还研究了不同退火工艺条件对薄膜应力的影响，可以实现薄膜低温退火．论文还对TiN的刻蚀和抗腐蚀特性进行了研究，对比了多种湿法对TiN的刻蚀情况，得出常温下TiN具有良好的抗腐蚀特性，并得到干法和湿法刻蚀速率．为TiN材料的MEMS应用打下了基础．[著者文摘]
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' X, D3 j5 A! h4 u+ ]关键词:TiN 溅射 应力 退火
, Z1 y& a6 W5 }4 ?8 ~- T# {$ Z分类号:　TB383[著者标引]文献标识码：A文章编号：1004-1699（2006）05-1448-03栏目信息：微纳制造
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, n% \5 g+ t) r( P* {# B; G, e$ QTiN Membrane for MEMS ApplicationsYANG Mei, SHUQiong, CHEN Jing1. College of Microelectronics , Beijing University, Beijing 100871, China ; 2. State Key Laboratory of Transducer Technology, Chinese Academy of Scieuces , Shanghai 200050,China Abstract:TiN membrane for MEMS applications is studied. The membrane is deposited by reactive RF sputtering, and the influence of critical process parameters, such as ration argon gas to nitrogen gas, gas pressure is investigated. The affection of different annealing process conditions on TiN film stress is also researched, low temperature annealing of film can be realized. Furthermore, the etching and anti-erosion characteristics of TiN film are investigated. Recording to the wet etching results of TiN film, TiN is antierosion in room temperature. Etch rate of SiC film by wet and dry etch techniques are measured. It is ready for MEMS applications.[著者文摘]

, x. {- Y- ]3 r8 @0 w, j- Q, @Key words:MEMS; TiN; sputtering; stress;annealing

rainbow

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天涯若比

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bradywu

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