低温沉积硅薄膜微结构的Raman分析

低温沉积硅薄膜微结构的Raman分析张丽伟[1,2] 赵剑涛[1] 杨根[1] 李红菊[1] 郭学军[1] 卢景霄[1][1]郑州大学材料物理教育部重点实验室,河南郑州450052 [2]新乡师范高等专科学校,河南新乡453000摘　要:用Raman散射谱研究了以SiH4/H2为气源，用等离子体增强化学气相沉积技术，低温制备的一系列硅薄膜的微结构特征。结果表明：在常规气压和常规功率下，衬底温度在200～500℃之间，存在结晶最佳点，400℃结晶效果相对最好;在高压高功率下沉积和常压常功率下沉积相比，高压高功率更有利于薄膜晶化;低温短时的高气压高功率沉积，玻璃衬底与铝覆盖的玻璃衬底相比，玻璃上的硅薄膜晶粒尺寸更大，而铝覆盖的玻璃衬底上的硅薄膜的晶化率更高。[著者文摘]
! K; V  T$ ]) Y* W, u* V2 `
" `, L3 m) b: A9 {关键词:Raman 硅薄膜 微结构
分类号:　TN304.05[著者标引]文献标识码：A文章编号：1001-5868（2007）01-0058-02栏目信息：材料、结构及工艺
/ l2 Z6 y9 X( l) s: e1 h  ^" @相关文献:主题相关 全文快照　　　

Raman Analysis of Microstructure of Silicon Thin Films Deposited at Low TemperaturesZHANG Li-wei, ZHAO Jian-tao, YANG Gen , LI Hong-ju , GUO Xue-jun , LU Jing-xiao 1. Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, CHN; 2. Xinxiang Normal College, Xinxiang 453000,CHNAbstract:The microstructure of silicon thin films fabricated at low temperature by plasma enhanced chemical vapor deposition（PECVD） using H2/SiH4 has been studied by Raman scattering.The results show that substrate temperature plays an important role in depositing process.And there is a best temperature point of 400 ℃ for crystallization between 200 ℃ to 500 ℃.The silicon thin films are easy to crystallize under high-pressure and high-power deposition process compared with conventional conditions.The grain size of silicon thin films on glass is larger than that on aluminum covered glass while the crystallinity of that on glass was lower than that on aluminum covered glass.[著者文摘]
" Z# J# ~  i4 k6 C* c5 a
Key words:Raman; silicon thin films; microstructure