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厚度对ZnS薄膜结构和应力的影响! X$ n: |0 ]6 @. t0 x; S! k6 M
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* i9 s2 F" b0 \【英文篇名】 Effect of thickness on properties of ZnS thin films
; M C I! t3 l9 F5 `0 _1 v【摘要】 用射频磁控溅射法在单晶Si基片上制备了4种不同厚度的ZnS膜,采用XRD和光学干涉相移法对薄膜的微结构和应力进行研究。结构分析表明,不同厚度的ZnS膜均呈多晶状态,并有明显的(220)晶面择优取向,晶体结构为立方晶型(闪锌矿)结构;随着薄膜厚度的增加,平均晶粒尺寸随之增大;薄膜的晶格常数在不同厚度下均比标准值稍大。应力分析表明,随着膜厚的增加,ZnS膜的应力差减小,在厚度为768 nm时的选区范围内应力差最小,应力分布较均匀。
3 t# ~/ A: w: N# E【英文摘要】 Four kinds of ZnS films with different thickness which were deposited on the Si substrate by IF magnetron sputtering are studied by XRD and the optical phase-shift technique in terms of its microstructure and stress.The result of microstructure analysis shows that the ZnS films with different thickness consist of fcc-ZnS nanoparticles and apparently have the preferred orientation(220).The films are made up by cubic structure,and the average grain size of films increases from 7.47 nm to(12.59 nm) as the film... |
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