|
Materials selection for thin films for radio frequency
) T- T: K# V3 h) T+ D# V g3 Cmicroelectromechanical systems% ^% q0 T! A+ H [0 ^
G. Guisbiers *, O. Van Overschelde, M. Wautelet
0 V0 B* u3 p8 p3 i9 {2 LPhysics of Condensed Matter, University of Mons-Hainaut, 23 Avenue Maistriau, 7000 Mons, Belgium6 l2 K) ^, j1 e5 V
Received 16 August 2005; accepted 6 April 20060 y% R% e$ `% `) Z8 P' k$ w
Abstract
) i/ n3 i' u) uMaterials selection is an important subject in microtechnology. The methodology developed by Ashby is used here. It is shown that it7 ^5 p8 \! P8 u3 |) s
can be applied easily to microelectromechanical systems (MEMS). Firstly, a selection concerning a minimization of intrinsic residual
: v6 r' f h. {& Z* X4 Nstresses for thin films deposited by evaporation process is presented. Secondly, the selection of materials to serve in the design of the E) \& d; j* a1 e( {1 e
bridge of a MEMS-RF switch and a MEMS-RF varicap (variable capacitor) is considered.0 B& |# G4 {8 ]" F, h
2006 Elsevier Ltd. All rights reserved. |
本帖子中包含更多资源
您需要 登录 才可以下载或查看,没有帐号?注册
x
|