Ion sources for commercial ion implanter applications

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Ion sources for commercial ion implanter applications

Walther, S.R.   Pedersen, B.O.   McKenna, C.M.   
Varian Ion Implant Syst., Gloucester, MA, USA;

8 K' ~& j1 w! f: A% |/ @This paper appears in: Particle Accelerator Conference, 1991. 'Accelerator Science and Technology'., Conference Record of the 1991 IEEE
Publication Date: 6-9 May 1991
On page(s): 2088 - 2092 vol.4
Meeting Date: 05/06/1991 - 05/09/1991
7 L9 y0 b: n5 W" QLocation: San Francisco, CA
INSPEC Accession Number:4209383
Digital Object Identifier: 10.1109/PAC.1991.164876
Posted online: 2002-08-06 17:48:43.0
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5 }  B+ ]2 Q& x1 f" }6 m# e- N% L" ~Abstract
; B  ^3 y! k: |- l1 }8 B% o, t  vThe authors review some of the history as well as recent developments in the implanter ion source field. It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generation of ion implanters. In addition to the drive for improved beam currents, the need of the implant users for reliable long-life operation has driven much of the new development in implanter ion sources. In addition, the opportunity to achieve new capabilities, such as buried oxide layers, has sparked novel ion source designs to answer the demand. Particular attention is given here to microwave ion sources, the single ring cusp ion source, and multicusp ion sources