Influence of negative ion element impurities on laser induced damage threshol

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Influence of negative ion element impurities on laser induced
$ _# L4 ]2 L# @damage threshold of HfO2 thin film
ShiGang Wu a,b,*, GuangLei Tian a,b, ZhiLin Xia a,b, JianDa Shao a, ZhengXiu Fan a
a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
9 [# L5 x# R+ i& `, W2 Kb Graduate School, Chinese Academy of Sciences, Beijing 100080, China
" E9 z" v" I" Q7 }" A0 |4 SReceived 8 October 2005; received in revised form 18 January 2006; accepted 22 January 2006
Available online 6 March 2006
Abstract
7 S' C  q# D" S. }* ?; fNegative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were
detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak
, R* \0 B2 P: R8 N: [( T% G- N  Pabsorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown
model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These
results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film.
, G0 y0 Q0 b9 T# Y; l# 2006 Elsevier B.V. All rights reserved.
) |3 s# D2 A6 T+ gPACS: 68.55.Ln; 81.70. q
; y, }: S- F7 d0 Y- @0 ~Keywords: Negative ion elements; Impurities breakdown model; HfO2 thin film; Weak absorption; LIDT