Analysis of material modifications induced during laser damage in SiO2 thin f

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Analysis of material modifications induced during laser damage in SiO2 thin films
L. Gallais *, J. Capoulade, F. Wagner, J.Y. Natoli, M. Commandre´
( [* ~1 D( s: c8 R+ x1 gInstitut Fresnel (UMR CNRS), Ecole Ge´ne´raliste d’Inge´nieurs de Marseille, Universite´ de Provence, Universite´ Paul Cezanne,
9 j2 n  s+ \2 Q4 C9 g9 V: t5 iDomaine Universitaire de St Je´roˆme, 13397 Marseille Cedex 20, France
! ^5 `8 ]5 S& ^( H/ T9 IReceived 21 August 2006; received in revised form 13 November 2006; accepted 15 November 2006
Abstract
The damage mechanisms in silica thin films exposed to high fluence 1064 nm nano-second laser pulses are investigated. The thin films
% i7 R; G# ^9 `3 bunder study are made with different techniques (evaporation and sputtering, with and without ion assistance) and the results are compared.
The material morphological, optical and structural modifications are locally analyzed with optical microscopy and profilometry,
photoluminescence and absorption microscopies. These observations are made for fluences near and above the laser damage threshold,
. N* e9 K1 p7 G* w- Vand also in the case of multiple pulse irradiations. An increase in absorption in and around the damages is observed, as well as the generation
, m$ C. A5 H. [3 W! i! P. mof different defects that we spatially resolve with absorption and luminescence mappings.
9 y2 }9 T- L6 L5 T 2006 Elsevier B.V. All rights reserved.

anguangdi

谢谢楼主!!!!!!!!!!!!!!!!!!!!! [s:1]

yiyi2005

谢谢楼主

danne

谢谢，但是我想问问有没有对应的译文呢