电化学沉积法制备CuSCN固体电解质薄膜的研究

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电化学沉积法制备CuSCN固体电解质薄膜的研究武卫兵 靳正国 华缜 邱继军天津大学材料学院,天津300072摘　要:采用电化学沉积法用水作溶剂在ITO透明导电玻璃上制备出了P—CuSCN薄膜。研究了络合剂对电沉积液为CuSO4，KSCN水溶液的CuSCN薄膜沉积效果的影响，探讨了利用电化学方法实现CuSCN阴极式沉积的机理，并研究了P—CuSCN薄膜的结构特性和光电学特性。结果表明，制备的薄膜为β—CuSCN结构，属于六方晶系，直接光学带隙为3．8eV。表面电导率为0.8×10^-3S·cm^-1，各项参数符合染料敏化PEC电池的基本要求。[著者文摘]
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# e) O3 z( x5 m6 x; f" I; ?3 _关键词:CuSCN薄膜 电化学沉积 染料敏化太阳能电池 固体电解质
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分类号:　TK512.3[著者标引]文献标识码：A文章编号：0254-0096（2006）02-0141-05相关文献:主题相关

6 h3 J# k5 z5 j2 h! b) aSTUDY ON THE ELECTRODEPOSITION OF CuSCN THIN FILMSWu Weibing, Jin Zhengguo, Hua Zhen, Qiu Jijun （ The School of Materual Science and Engineering, Tianfin University, Tianjin 300072, China）Abstract:CuSCN thin films were prepared by electrodeposition method from aqueous solution containing CuSO4, KSCN with different complexes on transparent conducting glass substrates. The mechanism of cathodic electrochemistry deposition of CuSCN films was explored, and the influence of complexes on the structural, optical and electrical properties of the films was studied. The samples were characterized with XRD, SEM and optical measurements. The as-deposited films are of polycrystalline β-CuSCN with hexagonal lattice, and the direct optical band gap is 3.8eV, and the surface conductivity is 0.8 × 10^-3 S· cm^-1, which can meet for the requirements of DSPEC cells.[著者文摘]

Key words:CuSCN; electrodeposition; DSPEC; solid electrolyte