高损伤阈值三倍频分离膜

gds

高损伤阈值三倍频分离膜王孝东[1,2] 张锦龙[1,2] 马彬[1,2,3] 焦宏飞[1,2,3] 丁涛[1,2] 程鑫彬[1,2][1]同济大学精密光学工程技术研究所,上海200092 [2]上海市特殊人工微结构材料与技术重点实验室,上海200092 [3]同济大学航空航天与力学学院,上海200092摘　要:设计了Nd：YAG激光用三倍频分离膜,膜层材料为SiO2和HfO2。经过优化,膜系在355 nm处的反射率在99%以上,在532 nm和1 064 nm处透射率也在99%以上。采用电子束蒸发技术,在熔融石英基底上制备了样品,经测量,制备的分离膜光学性能与设计值接近。分离膜在355 nm激光辐照下的损伤阈值为5.1 J/cm2,并用微分干涉显微镜表征了薄膜损伤形貌。[著者文摘]

7 h( J" W( U! F关键词:三倍频分离膜 电子束蒸发 激光损伤阈值 光学薄膜

& V- O8 s' s5 N, o! h分类号:　O484.4[著者标引]
: O& m: r9 T* R$ H' N文献标识码：A
文章编号：1001-4322（2011）07-1882-03
4 y4 y: q  u* O% C5 ]栏目信息：ICF与激光等离子体
+ h; }/ U/ M# t. U5 {
6 E6 O2 k1 N5 [5 L相关文献:主题相关 全文快照　　　

0 L0 _% L8 }+ ~! e$ \- _
* F7 o8 V5 \0 |2 S$ k7 }Third harmonic separator with high laser-induced damage thresholdWang Xiaodong,Zhang Jinlong,Ma Bin,Jiao Hongfei,Ding Tao,Cheng Xinbin,1.Institute of Precision Optical Engineering,Tongji University,Shanghai 200092,China;2.Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology,Shanghai 200092,China;3.School of Aerospace Engineering and Applied Mechanics,Tongji University,Shanghai 200092,ChinaAbstract:Using electron beam evaporation,a 355 nm separator was designed by depositiing SiO2 and HfO2 alternatively.The coating has a reflectivity of larger than 99% at 355 nm through optimization and a transmittance larger than 99% at 532 nm and 1 064 nm.It has good electric-field distribution.The spectra of the fabricated coating is close to the designed one.The laser-induced damage threshold of the coating is 5.1 J/cm2.Morphology of laser-induced damage of the coating was characterized by differential interference contrast microscope.[著者文摘]
+ I: ~$ H; a8 H; U* G
Key words:third harmonic separator; electron beam evaporation; laser-induced damaged threshold; thin film
# f8 y) l% f5 o! D. G+ @

: N6 ?$ ]5 i, |, u0 j

longmin

好資料謝謝樓主