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摘 要:采用脉冲激光沉积技术在蓝宝石(α-Al2O3)衬底上制备了不同Mn掺杂浓度的ZnO薄膜.实验结果表明,合适浓度的Mn的掺人,有利于ZnO:Mn薄膜(002)生长而不形成Mn的氧化物,同时,所有的薄膜均呈现出了室温铁磁特性.随着Mn含量的增加,薄膜光学带隙红移,对应的Mn离子电荷转移跃迁吸收逐渐增强,磁化强度逐渐减小.实验结果支持薄膜的铁磁性起源于替位的Mn离子之间的长程铁磁相互作用,Mn离子增加导致平均磁矩减小,可归因于邻近的Mn离子密度的增加引起的反铁磁作用增强,相对应的sp-d交换作用逐渐增加.
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关键词:Mn掺杂ZnO;sp-d交换;铁磁特性
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分类号:TB7 文献标识码:A 3 F% t- V3 r0 @4 D& B5 z0 p' l
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文章编号:1672-7126(2008)增刊-022-04 . F& O F, e3 c4 I5 N6 B0 H
# g% P t- L8 F( o0 }+ b7 s+ `# i 参考文献: # E4 M+ m5 s" E7 K- Z- K
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[1]Wan Q,Li Q H,Chen Y J,et al.Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors[J].Appl.Phys Lett.,2004,84(18):3654
2 Z \4 q0 `/ M* { k# K: N; b
. h4 S. v8 p% n [2]Dietl T,Ohno H,Matsukura F,et al.Science,2000,287:1019 3 w" Q/ D6 |9 ~: S+ K6 ]# {9 j
3 ?: F# b' C3 p! E& G: \2 _- w. q
[3]Oiwa A,Slupinski T,Munekata H.Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In,Mn) As/GaSb[J].Appl.Phys.Lett.,2001,78(4):518
9 q. `- _- T6 J' G
' m* o2 [0 A7 ^$ ~ [4]Ueda K,Tabata H,Kawai T.Magnetic and electric properties of transition-metal-doped ZnO films[J].Appl.Phys.Lett.,2001,79(7):988 ! F, ~: Q/ Q! Z+ D
9 T4 w8 b; I) _$ v9 q( r
[5]Sharma P.Nat.Mater.,2003,2:673
% Z7 l$ |7 R% K( l) q8 J4 w
# n6 P6 Z/ ?" k0 a [6]Change V Q,Wang D B,Luo X H,et al.Synthesis,optical,and magnetic properties of diluted magnetic semiconductor Zn1-xMxO nanowires via vapor phase growth[J].Appl.Phys.Lett.,2003,83:4020 & E0 j8 T4 s/ @8 b' c X& l" }
. q- Z" ]- M: e* }9 J' | X* u1 d+ l [7]Ankiewicz A O,Carmo M C,Sobolev N A,et al.Electron paramagnetic resonance in transition metal-doped ZnO nanowires[J].J.Appl.Phys.,2007,101:024324 . _% H$ q* p# `6 D; Q
3 H" W ?2 D8 h4 Y
[8]林益梅,叶志镇,陈兰兰,等.ZnO薄膜的缺陷研究进展[J],真空科学与技术学报,2006,26(5):385-391
! ?0 H' W9 | h( t% v" K$ f; N, u) z2 ^/ B! z
[9]Fukumara T,Jin Z,Ohtomo A,et al.An oxide-diluted magnetic semiconductor:Mn-doped ZnO[J].Appl.Phys.Lett.,1999,75:3366 4 O8 y& l0 H) v3 K0 u/ E6 k
" ]/ i- F9 n; o/ Y1 d- Y2 k [10]Bylsma R B,Beeker W M,Kossut J,et al.Dependence of energy gap on x and T in Zn1-xMxSe:The role of exchange interaction[J].Phys.Rev.B,1986,33:8207
7 c, T5 d3 i" k! t( I( d
$ n2 \. a" b; r* k0 K [11]Mi W B,Bai H L,Liu H,et al.Miernstructure,magnetic,and optical properties of sputtered Mn-doped ZnO films with high-temperature ferromagnetism[J].J.Appl.Phys.,2007,101:023904
* S2 G8 f/ _! c3 z1 C/ Q& M' _6 t# A6 e$ w9 S2 T) u2 G
[12]Grimmeiss H G,Oxren C.Identification of deep centers in ZnSe[J].J.Appl.Phys.,1977,48:5122 ' s! g9 O f* P! m5 n% y
H$ G+ A. R$ ~1 k7 ]3 Z8 D' c
[13]Kim K J,Park Y R.Spectroscopic ellipsometry study of optical transitions in Zn1-xMxO alloys[J].Appl.Phys.Lett.,2002,81:1420
1 i; D$ g) ?/ V. ? Q3 M# U( d7 F! U, ?) Y% H# J
[14]Yoo Y Z,Fukumura T,Jin Z W,et al.ZnO:CoO sofid solution thin films[J].J.Appl.Phys.,2001,90:4246
+ s0 p |3 D y4 R, K! c# w) ~8 D" Y4 M' K
[15]Ivill M,Pearton S J,He Y W,et.al.Magnetization dependence on cartier doping in epitaxial ZnO thin films co-doped with Mn and P[J].J.Appl:Phys.,101,2007:123909
7 W5 c, O F8 x, P* B) {4 v8 w! R' a2 X
[16]Iusan D,Sanyal B,Eriksson O.Theoretical stndy of the magnetism of Mn-doped ZnO with and without defects[J].Phys.Rev.B,2006,74:235208 2 ]/ e4 i3 D) k4 p
! h S6 m. g$ F# ]1 M: o1 @, x
[17]Neal J R,Behan A J,Ibrahim R M,et.al.Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal Doped ZnO Thin Films[J].Phys.Rev.L,2006,96:197208
# T: X! j$ R+ H6 U/ F, A5 a% V
) f$ H0 n$ z# y; t, l2 F) O! R. U [18]Szczyko J,Mac W,Twardowski A.Antiferromagnetic p-d exReview B,1999,59:12935 |
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