ZnO:Mn稀磁薄膜光学性质和铁磁行为分析

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　　摘　要：采用脉冲激光沉积技术在蓝宝石（α-Al2O3）衬底上制备了不同Mn掺杂浓度的ZnO薄膜.实验结果表明,合适浓度的Mn的掺人,有利于ZnO:Mn薄膜（002）生长而不形成Mn的氧化物,同时,所有的薄膜均呈现出了室温铁磁特性.随着Mn含量的增加,薄膜光学带隙红移,对应的Mn离子电荷转移跃迁吸收逐渐增强,磁化强度逐渐减小.实验结果支持薄膜的铁磁性起源于替位的Mn离子之间的长程铁磁相互作用,Mn离子增加导致平均磁矩减小,可归因于邻近的Mn离子密度的增加引起的反铁磁作用增强,相对应的sp-d交换作用逐渐增加.
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' F; Q3 w$ X( w 　　关键词：Mn掺杂ZnO;sp-d交换;铁磁特性

  J) P+ n* t  D2 T 　　分类号：TB7　文献标识码：A
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4 e5 a( @+ b7 y. g; t9 x 　　文章编号：1672-7126（2008）增刊-022-04

　　参考文献：
8 q  [/ {! ]2 c9 x' u- j1 n
+ G& G2 K. R0 S$ u7 R 　　[1]Wan Q,Li Q H,Chen Y J,et al.Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors[J].Appl.Phys Lett.,2004,84（18）:3654
( f# V& v  V6 P+ W/ @3 Z. M
　　[2]Dietl T,Ohno H,Matsukura F,et al.Science,2000,287:1019
3 w+ ]3 Q9 o4 j
　　[3]Oiwa A,Slupinski T,Munekata H.Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-（In,Mn） As/GaSb[J].Appl.Phys.Lett.,2001,78（4）:518

　　[4]Ueda K,Tabata H,Kawai T.Magnetic and electric properties of transition-metal-doped ZnO films[J].Appl.Phys.Lett.,2001,79（7）:988
( b+ q( U3 f' |
　　[5]Sharma P.Nat.Mater.,2003,2:673

　　[6]Change V Q,Wang D B,Luo X H,et al.Synthesis,optical,and magnetic properties of diluted magnetic semiconductor Zn1-xMxO nanowires via vapor phase growth[J].Appl.Phys.Lett.,2003,83:4020

　　[7]Ankiewicz A O,Carmo M C,Sobolev N A,et al.Electron paramagnetic resonance in transition metal-doped ZnO nanowires[J].J.Appl.Phys.,2007,101:024324
3 z5 D7 Q) Z1 M; W! d
1 h8 J6 h& v8 j* ?  X( w$ w 　　[8]林益梅,叶志镇,陈兰兰,等.ZnO薄膜的缺陷研究进展[J],真空科学与技术学报,2006,26（5）:385-391

　　[9]Fukumara T,Jin Z,Ohtomo A,et al.An oxide-diluted magnetic semiconductor:Mn-doped ZnO[J].Appl.Phys.Lett.,1999,75:3366

　　[10]Bylsma R B,Beeker W M,Kossut J,et al.Dependence of energy gap on x and T in Zn1-xMxSe:The role of exchange interaction[J].Phys.Rev.B,1986,33:8207

. d% \8 T2 D5 t& [2 K 　　[11]Mi W B,Bai H L,Liu H,et al.Miernstructure,magnetic,and optical properties of sputtered Mn-doped ZnO films with high-temperature ferromagnetism[J].J.Appl.Phys.,2007,101:023904

　　[12]Grimmeiss H G,Oxren C.Identification of deep centers in ZnSe[J].J.Appl.Phys.,1977,48:5122

7 e% L6 l0 `' [4 l* ?# O4 u 　　[13]Kim K J,Park Y R.Spectroscopic ellipsometry study of optical transitions in Zn1-xMxO alloys[J].Appl.Phys.Lett.,2002,81:1420

& z! h7 s3 i" [" T& t+ ~ 　　[14]Yoo Y Z,Fukumura T,Jin Z W,et al.ZnO:CoO sofid solution thin films[J].J.Appl.Phys.,2001,90:4246

* U0 J; j* U2 C  p) m 　　[15]Ivill M,Pearton S J,He Y W,et.al.Magnetization dependence on cartier doping in epitaxial ZnO thin films co-doped with Mn and P[J].J.Appl:Phys.,101,2007:123909

5 G, i" x% P# g1 y/ d+ `& J 　　[16]Iusan D,Sanyal B,Eriksson O.Theoretical stndy of the magnetism of Mn-doped ZnO with and without defects[J].Phys.Rev.B,2006,74:235208
/ Q- u. n( ~2 c+ n# U) i
　　[17]Neal J R,Behan A J,Ibrahim R M,et.al.Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal Doped ZnO Thin Films[J].Phys.Rev.L,2006,96:197208

( ^3 ]* m% e/ z; [0 B 　　[18]Szczyko J,Mac W,Twardowski A.Antiferromagnetic p-d exReview B,1999,59:12935