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高损伤阈值三倍频分离膜王孝东[1,2] 张锦龙[1,2] 马彬[1,2,3] 焦宏飞[1,2,3] 丁涛[1,2] 程鑫彬[1,2][1]同济大学精密光学工程技术研究所,上海200092 [2]上海市特殊人工微结构材料与技术重点实验室,上海200092 [3]同济大学航空航天与力学学院,上海200092摘 要:设计了Nd:YAG激光用三倍频分离膜,膜层材料为SiO2和HfO2。经过优化,膜系在355 nm处的反射率在99%以上,在532 nm和1 064 nm处透射率也在99%以上。采用电子束蒸发技术,在熔融石英基底上制备了样品,经测量,制备的分离膜光学性能与设计值接近。分离膜在355 nm激光辐照下的损伤阈值为5.1 J/cm2,并用微分干涉显微镜表征了薄膜损伤形貌。[著者文摘]% O- Q+ o, @: |. s* K
6 r, p8 d7 U# K' v+ B; B关键词:三倍频分离膜 电子束蒸发 激光损伤阈值 光学薄膜, V% o: k! e* w5 C/ G3 ^
6 }7 t5 Y; }5 C. E" z) }$ w分类号: O484.4[著者标引]
$ {5 }( W" D5 I% p+ D4 K2 ^文献标识码:A2 ~4 o" J$ g3 T& `5 H4 l
文章编号:1001-4322(2011)07-1882-03
5 J/ X* J) R B5 U栏目信息:ICF与激光等离子体
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相关文献:主题相关 全文快照 8 \7 d7 n {4 }/ k7 k. [
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7 u7 m+ R& }7 b4 _/ y/ g3 {+ lThird harmonic separator with high laser-induced damage thresholdWang Xiaodong,Zhang Jinlong,Ma Bin,Jiao Hongfei,Ding Tao,Cheng Xinbin,1.Institute of Precision Optical Engineering,Tongji University,Shanghai 200092,China;2.Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology,Shanghai 200092,China;3.School of Aerospace Engineering and Applied Mechanics,Tongji University,Shanghai 200092,ChinaAbstract:Using electron beam evaporation,a 355 nm separator was designed by depositiing SiO2 and HfO2 alternatively.The coating has a reflectivity of larger than 99% at 355 nm through optimization and a transmittance larger than 99% at 532 nm and 1 064 nm.It has good electric-field distribution.The spectra of the fabricated coating is close to the designed one.The laser-induced damage threshold of the coating is 5.1 J/cm2.Morphology of laser-induced damage of the coating was characterized by differential interference contrast microscope.[著者文摘] W. U. X$ P9 s1 j) O" {# L
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Key words:third harmonic separator; electron beam evaporation; laser-induced damaged threshold; thin film B# ^3 Y" o% X. U0 Q0 t6 F
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