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Ion Assisted Deposition (lAD)

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发表于 2010-5-21 21:40:09 | 显示全部楼层 |阅读模式
Ion Assisted Deposition (lAD)) I  N+ U2 D4 @! y
1. Why IAD?
% T$ D+ I( c' U/ x* R$ O$ JDuring reactive evaporation, e.g. for optical applications, energy has to be introduced into the
- c$ k' _# y2 |- u& J9 @! M+ o$ tgrowing film, otherwise it will not adhere well to the substrate, will not be dense and will not be
( `4 d8 |5 z8 A5 |5 f; M4 Ucompletely oxidized. In case of conventional evaporation processes this energy is introduced by! @, E2 W' Z2 b' |1 n
heating the substrate while the film is growing. The necessary temperatures are typically in the
" c9 B! ~/ U3 S, |/ zrange of 250 °C – 300 °C. In case of IAD, the energy is introduced by energetic ions from a
7 `; r$ u. \3 v6 @. s5 H0 N, [0 E2 Ysuitable ion source and substrate temperatures can be reduced, in many cases to ambient
$ l" C" f# v! q5 Gtemperatures. The ion source typically produces both ions and electronically excited molecules$ h' j& y, V% ^& h+ n, ~6 `4 n. k/ N
(radicals). The respective influences of the two species can approximately be described as
3 Y6 b  }+ r# W1 Z% l# K, _% `follows:3 p3 m) `9 H0 }' g7 m8 c
Energetic ions (mechanical influence):; Z- ~2 U8 j0 e
• Cleaning of the substrate surface, removing mainly water and hydrocarbons
# D4 c' h6 j2 r- }* h' w, a• Densification of the growing film./ t( r7 [( j7 F- J
• Removal of loosely bound molecules during film growth.. Q6 n. n4 z% M: F+ |
Radicals (chemical influence):" {- X- q/ Z2 [- k" \
• Increases reactivity of the reactive gas, better control of film stoichiometry
+ q5 b( b5 F- J" a$ k& |% I• Allows for higher deposition (growth) rates.3 i9 t; D. T# H5 b4 w
These advantages are preconditions to achieve films of good quality with reactive coating- }8 x0 P& B# ^% l
processes at room temperature. Nevertheless, they also help to broaden the accessible parameter. ~# z6 E  {  I" m
range in case of processes at elevated temperatures.
3 x) a, n! Z% k0 {" n2. Ion source requirements for IAD processes
8 P# h" A" X; _( a2 p4 l' cIon sources used for IAD processes typically have to fulfill the following requirements:
- ~, U7 S' p) |8 j- V# f' b• Compatibility with reactive gases, particularly Oxygen and Nitrogen, d$ U  }2 j* V8 E
• Sufficient ion current density to make dense moisture stable films., b9 ~* x% d& P( i6 @, a+ U& l% h
• Adjustable to allow for control over a wide range of chamber conditions (pumping speed, chamber, ^" U4 [, u% P; S% ^
size). Also, some users will want high currents at low voltages (100ev - 200ev) while others will want0 M9 O2 p+ C6 F; K
higher energies up to 1000 ev and possibly lower currents.+ I4 v; |, m+ k" c/ |* P
• Reliability, since the ion sources are primarily used in production systems.. t* ]9 l" b  m6 {+ ^! t# r1 }
• Long cleaning and maintenance cycles with simple ignition and switch-off.
% P) t7 p9 z) J' S; CWhen retrofitting an ion source to an existing coating chamber two additional requirements& q: A: K8 K" \5 a9 ]6 I
become important:) q2 x% _; Y' n" P0 g1 z4 D
• Simple integration of the power supplies into the system controls
5 o0 W% i2 b; h8 r, @6 M• Compact dimensions, since space is sometimes limited in existing coating chambers.9 [9 A7 ]* w" Z9 I2 t4 L" {
DENTON VACUUM, INC. 1259 NORTH CHURCH STREET, MOORESTOWN, NJ 08057 USA (Ph 609-439-9100, Fax 609-439-9111)

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发表于 2010-5-21 23:03:49 | 显示全部楼层
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