离子束轰击对电子束蒸发制备二氧化钛薄膜应力的影响

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离子束轰击对电子束蒸发制备二氧化钛薄膜应力的影响
  E0 G# i7 O9 S' d' G+ T陈焘 罗崇泰 王多书 刘宏开兰州物理研究所表面工程技术国家级重点实验室,兰州730000摘　要:在硅基底上用电子束蒸发方法制备了二氧化钛薄膜。通过XRD、AFM和薄膜应力测试仪研究了离子束轰击对薄膜应力的影响规律。结果表明沉积温度为323K、沉积速率为0．2nm·s^-1时，二氧化钛薄膜具有较小的应力值，平均应力为铝．2MPa。用能量为113eV的离子束轰击300s时，平均应力由72．9MPa的张应力变为16．7MPa的压应力。二氧化钛薄膜的微观结构变化是影响薄膜应力的主要因素。[著者文摘]

关键词:二氧化钛 离子束轰击 张应力 压应力 薄膜
0 o+ H" O( [* B4 }/ b2 u分类号:　O484[著者标引]文献标识码：A文章编号：1672-7126（2009）02-164-04栏目信息：学术论文
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' u3 _. @. u- n& dIon Beam Bombardment and Variations in Stress of TiO2 FilmsChen Tao , Luo Chongtai, Wang Duoshu, Liu Hongkai National Key Lab. of Surface Engineering, Lanzhou Institute of Physics, Ianzhou 730000, ChinaAbstract:The titanium dioxide films, deposited by electron-beam evaporation of Ti203 powder on Si（100） wafer substrates, were surface modified with ion beam bombardment. The influence of the ion bombardment on its microstructures and stress were characterized with X-ray diffraction （XRD） and atomic force microscopy （AFM）. The results show that fairly large stress exists in TiO2 films grown by electron beam evaporation, and that Ar ion sputtering significantly lowers the surface stress. The stress, with an average of 48.2 MPa, is fairly small,of the films grown at 323K and a deposition rate of 0.2nm/s. The ion bombardment at 113eV for 300s,turned an averaged tensile stress of 72.gMPa into a compressive stress of 16.7MPa.[著者文摘]
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* t9 A# n. i* T' |- l9 ], u% R! LKey words:Titanium oxide, Ion Beam Bombarding, Tensile stress, Compress stress, Thin films

cgzsad0432

不知道有没有关于离子源方面的知识不？对这个不了解！

英雄镀膜

谢谢了哦