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Receives Patent for New Method of Making Thin Films2 L9 E& t7 I2 [8 H0 \7 z$ K
Anonymous. CircuiTree. Troy: Nov 2007. Vol. 20, Iss. 11; pg. 25, 1 pgs
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Abstract (Summary)! ]7 @% l& R6 H8 |, e Q* y9 E, p
Dow Corning Corporation's Advanced Technologies and Ventures Business received a U.S. patent on a new method for making low dielectric constant (low-k) silicon carbide and hydrogenated silicon oxycarbide thin films. |
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