There are a number of ways to modify the nucleation density of
0 o& g4 b& D3 t1 [depositing atoms on substrate surfaces including:8 [. j& v. Q; R+ {# N0 V1 N
• Change the deposition temperature
8 ^( o/ I) L+ K* o, f$ F) D4 [. _increasing—increases reaction with the surface; increases surface mobility
& W/ R6 v( U! y- ]& E8 Wdecreasing—decreases surface mobility
6 m9 N6 m1 G3 V# M' ]• Increase the deposition rate to increase collision probability of the adatoms, O1 @7 \$ c" ^$ W$ e# i2 u$ k
• Change the surface chemistry to make the surface more0 a" ]+ b4 L3 Q3 \8 m0 l4 v
reactive—e.g., cleaning,oxygen treatment of polymer
- t9 U4 _& Y7 j" F, Osurfaces! c6 _6 M- z% q% L4 D; e' V. s2 R; U
• Sensitizing the surface by the addition of “nucleating agents”" h: v) V4 M; L& p3 U
• Generation of nucleation sites on the surface—e.g., lattice3 \$ l7 Y* \! O* z% H6 v* P
defects, charge sites on insulators by5 n6 y3 M6 p: ^
© energetic particle bombardment to produce lattice1 C% X5 ]* K% v( L
defects# m, F" e5 B# j* j
© incorporation of species into the surface by ion
$ @6 M' s% d# i/ i( rimplantation or chemical substitution
5 C& R( D. L2 s5 k. q7 A© electron bombardment —charge centers on1 a8 ~/ x5 [% I7 i6 M
insulator surfaces4 ?1 k, q% H3 B! Q$ C. v8 ]/ W' f
© photon bombardment ]—charge centers on insulator9 N f) b: F# t8 L2 T
Surfaces
) t# \, Y' ?* b( I• Co-deposition or absorption of reactive species
+ g/ i' q# R- t/ F3 o* s/ Z# e• Surface morphology—roughening or smoothing
/ @/ E% v# Y0 J9 x( J( b Z7 x/ D• Creation of a new surface—“basecoat” or “glue layer” |