There are a number of ways to modify the nucleation density of
1 \+ y; F# r8 K. Jdepositing atoms on substrate surfaces including:; c4 N, t9 A4 y- Z1 l
• Change the deposition temperature
/ `# {8 q2 c1 T- ~. V/ Y* c8 Aincreasing—increases reaction with the surface; increases surface mobility$ l& R+ s' o6 W/ ?! @. z! C z: d
decreasing—decreases surface mobility
1 R+ \, d# E8 _8 f5 Z+ N• Increase the deposition rate to increase collision probability of the adatoms0 Z1 Z; G( |7 l* R
• Change the surface chemistry to make the surface more
0 i8 W9 Z6 j/ F# |8 _reactive—e.g., cleaning,oxygen treatment of polymer F5 r! Y+ j* O4 o4 q7 S Q
surfaces9 R9 t( R! g S4 ~- `' A
• Sensitizing the surface by the addition of “nucleating agents”2 ?7 `' ]( ~( J" v* M
• Generation of nucleation sites on the surface—e.g., lattice
; D. X. H* T8 C( Hdefects, charge sites on insulators by3 g# H2 U1 L1 K0 ~- R8 k# T
© energetic particle bombardment to produce lattice
4 y; ?2 `1 ^( z) G4 Qdefects s% a: E: ^5 G0 C( {: Q4 P
© incorporation of species into the surface by ion
. K$ N" e6 G2 M$ e2 iimplantation or chemical substitution" k5 _8 c+ i' d& N$ I0 ^
© electron bombardment —charge centers on, d* L/ ?& f5 m6 {
insulator surfaces3 Q+ B) ^, U7 q! Z* c4 g! w4 t! a
© photon bombardment ]—charge centers on insulator. K# B+ l- u* S5 ~
Surfaces* L# p" {3 M8 H% b9 d- l; }
• Co-deposition or absorption of reactive species
3 k) [- o$ `; ]• Surface morphology—roughening or smoothing1 Y' O6 k! } c) }
• Creation of a new surface—“basecoat” or “glue layer” |