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Materials selection for thin films for radio frequency X, l( o5 `$ `2 Z
microelectromechanical systems
$ J y+ C# ]" x# T5 bG. Guisbiers *, O. Van Overschelde, M. Wautelet
6 W( ~" @0 E, Q! ]6 uPhysics of Condensed Matter, University of Mons-Hainaut, 23 Avenue Maistriau, 7000 Mons, Belgium
7 `7 g% N% S% c; j/ U6 D! a0 f. [Received 16 August 2005; accepted 6 April 2006
$ y1 g) K, ^% [. aAbstract7 O& d; \7 K: y3 j1 _
Materials selection is an important subject in microtechnology. The methodology developed by Ashby is used here. It is shown that it1 ]: ~$ _! S- s/ P. q
can be applied easily to microelectromechanical systems (MEMS). Firstly, a selection concerning a minimization of intrinsic residual/ k/ a7 c8 n# {6 I- L& a# M
stresses for thin films deposited by evaporation process is presented. Secondly, the selection of materials to serve in the design of the
( D& `+ i2 V$ c7 Rbridge of a MEMS-RF switch and a MEMS-RF varicap (variable capacitor) is considered.
9 @5 W `8 ]! u, g1 g; J6 o3 f1 J3 C F 2006 Elsevier Ltd. All rights reserved. |
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