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Influence of negative ion element impurities on laser induced/ o* v9 H/ O1 |. S+ y: M
damage threshold of HfO2 thin film8 k8 l7 S: e2 ]. ^
ShiGang Wu a,b,*, GuangLei Tian a,b, ZhiLin Xia a,b, JianDa Shao a, ZhengXiu Fan a$ P: Y/ G% \* C' k8 }8 }
a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
+ Z- V# l# }0 ?b Graduate School, Chinese Academy of Sciences, Beijing 100080, China
6 `* y3 |+ v: jReceived 8 October 2005; received in revised form 18 January 2006; accepted 22 January 2006
+ c, ]$ H, T: j- x) g# \+ VAvailable online 6 March 2006
5 V1 ^# ^6 m" j2 BAbstract
$ o7 J7 F+ L9 ]& S1 zNegative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were( t' D( e ~4 T& L2 N* T4 j5 E$ y: o* o7 |
detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak; K* u2 J- J5 {# E. v2 W
absorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown }$ F) V4 x& r# ~+ |: |
model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These: Z8 R( k1 a5 S
results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film.
& M4 M+ V. {9 n& u# |1 ^( S+ M# 2006 Elsevier B.V. All rights reserved.# p6 t7 ^& D8 X ~ U9 O
PACS: 68.55.Ln; 81.70. q# l% J5 P) k( ^1 t6 u6 g
Keywords: Negative ion elements; Impurities breakdown model; HfO2 thin film; Weak absorption; LIDT |
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