1．55μm超辐射发光管端面减反射膜的研究

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1．55μm超辐射发光管端面减反射膜的研究
聂明局 刘德明 胡必春华中科技大学光电子工程系,湖北武汉430074摘　要:减反射膜层折射率和厚度的精密监控是超辐射发光管的关键技术。分析了超辐射发光管端面减反射膜的四种膜系，提出了监控薄膜厚度的挡板调制、高级次过正极值法。采用该法制备超低剩余反射膜的实验表明：单面镀膜后，砷化镓基片的剩余反射率达到O．04％；管芯的反馈谐振被抑制，出现超辐射现象，峰值波长从1610nm移动到1560nm，蓝移约60nm，光谱纹波小于0．3dB。[著者文摘]
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关键词:减反射膜 挡板调制法 超辐射发光管
# U/ W8 z% e8 Y  I: a分类号:　O484.1[免标]文献标识码：A文章编号：1005-5630（2006）04-0159-05栏目信息：薄膜制备与特性测试
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Facet antireflection coating of 1.55μm superluminescent diodeNIE Ming-ju, LIU De-ming, HU Bi-chun Department of Optoelectronic Engineering,Huazhong University of Science and Technology, Wuhan 430074,ChinaAbstract:The index of refraction and the layer thickness of single-layer coatings have to be strict controlled to meet for producing a high-quality single-layer antireflection coating on laser diodes facets. Analysised the facet antireflection coating of superluminescent diode. A mask modulator method combining multi-order, overshoot quantities of turning point monitoring technique are described. One facet coated LDs is driven and ASE spectra are measured. The residual reflectivity of coated GaAs is about 0.04%, the center wavelength shifts about 60 nm from 1610 nm to 1560 nm and the ripple in the gain is less than 0. 3 dB.[著者文摘]

' t* o- w# V/ K6 rKey words:antireflection coating; mask modulator method; superluminescent diode

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1．55μm超辐射发光管端面减反射膜的研究

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