掺杂CVD金刚石薄膜的应力分析

xx_912 · 发表于 2007-9-22 20:00:59

[/free]掺杂CVD金刚石薄膜的应力分析
李荣斌上海电机学院材料成型系,上海200245摘　要:在不同实验条件下，用微波等离子体化学气相沉积（MPCVD）技术在Si基体上制备了S掺杂和B—S共掺杂CVD金刚石薄膜，利用X射线衍射仪和拉曼光谱仪研究掺杂对CVD金刚石薄膜的应力影响．研究结果发现，随着S掺杂浓度的增加，薄膜中sp^2杂化碳含量和缺陷增多，CVD金刚石薄膜压应力增加；小尺寸的B原子与大尺寸的S原子共掺杂时，微量B的加入改变了CVD金刚石薄膜的应力状态，共掺杂形成B—S复合体进入金刚石晶体后降低金刚石晶体的晶格畸变程度，减少S原子在晶界上偏聚数量和晶体中非金刚石结构相含量，降低由于杂质、缺陷及sp^2杂化碳含量产生的晶格畸变和薄膜压应力，提高晶格完整性．[著者文摘]

关键词:金刚石薄膜掺杂应力
分类号:　O48[机标]文献标识码：文章编号：栏目信息：凝聚物质：结构、热学和力学性质
相关文献:主题相关全文快照　　　

Study of the stress in doped CVD diamond filmsLi Rong-Bin Department of Materials Science, Shanghai Dianji University, Shanghai 200245, ChinaAbstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared using chemical vapour deposition （CVD） on Si substrates under different conditions. The influence of doping on stress in CVD diamond films were investigated with X-ray diffraction and Raman spectra. The results show that the sp^2-carbon content, the concentration of defects and the residual compressive stress in CVD diamond films increase with increasing of sulphur content. Compared with sulphur doping of diamond films, the boron-sulphur co-doping with few boron atoms facilitates sulphur atom incorporation into diamond crystal. The boronsulphur complexes in diamond can reduce crystal lattice distortion and crystal imperfection. As a result, sp^2-carbon content and residual compressive stress in boron-sulphur co-doped diamond are reduced, and diamond crystal prefection is improved.[著者文摘]

Key words:diamond films, doping, stress

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rainbow · 发表于 2006-1-6 05:41:53

楼主，级别都这么高了，还在乎那点钱吗？

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