制备温度对TiO2基膜表面非晶态ZnO薄膜发光特性影响的研究

制备温度对TiO2基膜表面非晶态ZnO薄膜发光特性影响的研究
" l6 U% R" J, h7 c沈华1,史林兴2,王青1,何勇1,朱日宏1
1.南京理工大学电子工程与光电技术学院, 江苏 南京 210094;
% p8 g3 N8 [& N+ z; E2.南京理工大学理学院, 江苏 南京 210094
0 y6 I* w# P* \2 ?4 I  O8 m' Y收稿日期   修回日期   网络版发布日期  2007-7-10   接受日期   
摘要   利用电子束热蒸发镀膜的方式，以高纯度的ZnO和TiO2颗粒为原料，以Si为基底在有氧的气氛中制备ZnO/TiO2复合薄膜。研究制备温度对ZnO/TiO2薄膜的结构以及发光性能的影响。通过拉曼(Raman)谱和X射线衍射(XRD)谱分析了ZnO/TiO2薄膜的结构，表明所制备的ZnO薄膜为非晶态。用光致发光 (PL) 谱表征了它的发光特性，数据表明在250℃时制备的非晶态ZnO薄膜在波长389nm处具有极强的紫外光发射，在波长431nm处发出很强的紫光，在波长519nm处发出较强的黄绿光。

1 u! O( }6 o+ T, I! U7 m关键词   ZnO   TiO2   电子束热蒸发   紫外光发射   非晶态薄膜   
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. S; t" X! J0 b分类号 O462.3   O484.4-34   
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Influence of preparation temperature on photoluminescence of amorphous ZnO/TiO2 films
" d- v& v+ \3 w3 WSHEN Hua1,SHI Lin-xing2,WANG Qing1,HE Yong1,ZHU Ri-hong1
1.Institute of Electronic Engineering and Photo-electric Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
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2. School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
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$ B1 N; @; a" ?: ]! S/ vAbstract  Using pure ZnO and TiO2 grains, ZnO/TiO2thin films were fabricated on Si substrates by electron beam evaporation method in O2 environment. The structure and photoluminescence of ZnO/TiO2 thin films grown under different temperatures were investigated. The structural properties were investigated by X-ray diffraction and Raman spectra. The data indicate that the ZnO film deposited on TiO2 buffer layer are amorphous. Their optical properties were investigated by photoluminescence spectra. The photoluminescence measurements show that the amorphous ZnO/TiO2 thin film prepared at 250℃ emits strong UV at 389nm, strong violet light at 431nm and strong green?yellow light at 519nm.  
/ r6 W4 a3 ]; Y) X3 L  w/ dKey words   ZnO   TiO2   electron beam evaporation   UV emission   amorphous film