直流反应磁控溅射WO3薄膜气敏特性研究

直流反应磁控溅射WO3薄膜气敏特性研究尹英哲[1,2] 胡明[1] 冯有才[1] 陈鹏[1][1]天津大学,电子信息工程学院,天津300072 [2]金策工业大学,电子信息工程学院,朝鲜摘　要:用直流反应磁控溅射法制成纳米结构的WO3薄膜气敏传感器，通过XR，SEM和XPS对该薄膜的晶体结构和化学成分进行分析，研究了不同基片上制备的WO3薄膜的氨敏特性与薄膜厚度、退火温度的关系．实验得到的薄膜粒径大小约30-50nm，结果表明：在未抛光的三氧化二铝基片上沉积厚度为40nm的WO3薄膜，经过400℃退火，在体积分数为5×10^-5 NH3中的灵敏度达到300，而且气体选择性好，响应一恢复时间短，可以作为理想的氨敏元件．[著者文摘]
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关键词:WO3薄膜 氨敏传感器 直流反应磁控溅射
: t, `0 K$ `0 [% V+ J分类号:　TP212.2 TN304.055[著者标引]文献标识码：A文章编号：1004-1699（2007）04-0760-03栏目信息：生物化学类传感器
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7 ^( E( `, j6 G) f7 y$ [1 nStudy on Gas Sensing-Characteristics of WO3 Thin Film Manufactured by Dc Reactive Magnetron SputteringYIN Ying-zhe , HU Ming, FENG You-Cai, CHEN Peng School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, ChinaAbstract:WO3 nano-particles thin film gas sensors have been prepared by dc reactive magnetron sputtering. The film morphology, crystalline phase and chemical composition have been characterized through XRD, SEM, XPS analysis. NH3 gas sensing characteristics of WO3 thin film on different substrate for film thickness and annealing temperature were discussed. The grain size of films prepared was nearly 30-50 nm, the sensitivity of WO3 thin film on unpolished alumina of 40 nm thickness annealed at 400℃to 5 ×10^-5 NH3 gas reached to 300. Furthermore, the film shows good selectivity and its electric response suggest possibility of utilizing the ideal NH3 gas sensors.[著者文摘]
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Key words:WO3 thin film; NH3 gas sensor; dc reactive magnetron sputtering

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